This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...

In this paper, it is shown that Multilayer perceptron Neural Network can elegantly perform nonlinear regression of transfer characteristic of electronic devices. After rigorous computer simulations authors develop the optimal MLP NN models, which elegantly perform such a nonlinear regression. Results show that the proposed optimal MLP NN models have optimal values of MSE (mean square error), r ...

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

Objective . The purpose of this work is to study the characteristics an electric drive using a transistor reducer induction motor computer simulation tools. Method based on methods. Result values angular velocity are determined at fixed moment resistance for constructing static mechanical characteristic, as well efficiency and power factor with increasing active shaft. similar quantities motor,...

Nanowires are strong candidates as potential replacements for Bulk MOSFET architectures due to their better electrostatic integrity and performance. Impurity scattering is the source of series resistance that degrades the performance of small, doped nanowire transistors. In this work we have used a silicon nanowire transistor to investigate the inclusion of series resistance in quantum transpor...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

This article deals with fault detection and the classification of incipient intermittent open-transistor faults in grid-connected three-level T-type inverters. Normally, algorithms are developed for permanent faults. Nevertheless, difficulty to detect is much greater, appropriate methods required. requirement due fact that over time, its repetition may lead failures irreversible degradation. Th...

Single-electron transistors SETs are often discussed as elements. A single-electron transistor consists of a small conducting island coupled to source and.Single-electron transistor SET is a key element in our research field where. Figure 2: Transfer of electrons is a one-by-one in Single Electron Transistor.Nanoelectronics Single-electron transistor Coulomb blockade, Coulomb. Single Electron T...

in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...