نتایج جستجو برای: titanium nitride thin film reactive sputtering
تعداد نتایج: 388612 فیلتر نتایج به سال:
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A thin film coating of titanium nitride was applied to the surface of rf cavity tuners to reduce secondary electron generated when the existing copper base material is in place. The tuners are used in high-field gradients, where electron heating of the tuner is a problem. By reducing the generation of electrons the temperature of the tuners will be reduced, for better reliability. This paper co...
copper thin films with nano-scale structure have numerous applications in modern technology. in this work, cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by dc magnetron sputtering technique at room temperature in pure ar gas. the sputtering time was considered in 4, 8, 12 and 16 min, respectively. the thickness effect on the structural, morpholo...
We report a novel method of growing strongly-disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and critical temperature (Tc) can be tuned controlling the deposition pressure in range 1.1*10^-6 to 3.1*10^-5 mbar} film thickness d from 10nm 300nm. For thick films, reaches 1361 \Omega/\square T_c = 0.77K, which tran...
The structure of a titanium nitride film coated by arc ion plating on a Ni-50Ti shape memory alloy was characterized by X-ray photoelectron spectroscopy (XPS). The corrosion behavior of the titanium nitride-coated Ni-50Ti alloy was examined in 0.9% NaCl solution by potentiodynamic polarization measurements and a polarization resistance method. XPS spectra showed that the titanium nitride film c...
Titanium-boron-nitrogen (Ti-B-N) thin films were deposited by RF reactive magnetron sputtering using a titanium diboride (TiB2) target in an argon + nitrogen mixture. The mass flow rate was kept constant, whereas that of pulsed during the deposition. A constant pulsing period P = 10 s used, and introduction time gas (duty cycle (dc)) systematically varied from dc 0 to 100% period. This process ...
Nickel nitride electrodes were prepared by reactive sputtering of nickel under a N2 atmosphere at room temperature for application in mesoscopic dye- or quantum dot- sensitized solar cells. This facile and reliable method led to the formation of a Ni2N film with a cauliflower-like nanostructure and tetrahedral crystal lattice. The prepared nickel nitride electrodes exhibited an excellent chemic...
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