In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied X-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced current drive, whereas the body-strapped structures allow for active leakage control and in some cases impact ionization devices. We demonstrate an ...

This work examines the consequence of γ radioactivity on SOI-based Tunnel Field Effect Transistors & their use as radiation dosimeters. Extensive simulations have been carried out throughout study in order to examine creation e--h+ pairs oxide field predict device’s features from region where transistor operation around pinch-off voltage significant agglomeration area. It was found that pre...

The aim of the proposed paper is an analytical model and realization characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One most applications TFET device which operates CP technique biosensor. CP-TFET to be used as effective detect uncharged molecules bio-sample solution. Charge one some techniques that recently invited induce carriers inside devices. In this...

Vertically aligned silicon nanowires (SiNWs) were cost-effectively formed on a four-inch silicon wafer using a simple room temperature approach, i.e., metal-assisted electroless etching. Tapering the NWs by post-KOH dipping achieved separation of each NW from the bunched NW, resulting in a strong enhancement of broadband optical absorption. As electroless etching time increases, the optical cro...

In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs o...

Mild-mannered catalyst: a novel procedure to load a MoS(2) co-catalyst onto the surface of silicon under mild-conditions (room temperature, atmospheric pressure, aqueous solution) by a photo-assisted electrodeposition process employing commercially available precursors is reported. The obtained Si-NW@MoS(2) photocathode showed similar catalytic activity for light-driven H(2) generation compared...

The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG – JL TFET) based 6 T SRAM structure is demonstrated by employing Germanium (Ge) and High-K gate dielectric material. high K insulation guarantees the proposed device to be used in low leakage memory systems. corresponding analytical model developed extract various parameters such as surface potential, ele...

In this paper, we propose a doping-less dual-material double-gate tunnel field-effect transistor with P+ pocket (PP-DMG TFET). This gate-engineered technique is typically used in MOSFET to improve device performance. The embedded at the source side enhance performance of pocket-engineered PP-DMG TFET device. paper compares four DG-TFET-based devices, i.e. single-material gate (SMG), (PP-SMG), (...