Different sizes of Ge nanocrystals embedded in a SiO2 matrix were formed by PECVD, and analyzed by TEM. Size effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect. OCIS codes: (160.4236) nanomaterial; (160.6000) semiconductor material;

Abstract Cobalt chromium alloys (CoCr) are commonly used as total disc replacement components. However, there concerns about its long-term biological effects. Coating the CoCr with a ceramic could improve implant’s biocompatibility and wear resistance. Silicon nitride (SiNx) coatings have emerged recent alternative to this end. While many evaluated physical vapour deposition (PVD) techniques de...

Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of ...

Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation - plasma-enhanced (PECVD]) of the gas phase and/or growth surface to lower temperature and allow for flexible coating design. PECVD causes be transformed into c...

Abstract Bacterial infection of chronic wounds is a major healthcare problem that affects the quality life millions patients worldwide and leads to substantial cost burden. This project focused on manufacture potential wound healing agent. Plasma polymers from oregano secondary metabolites (PP‐OSMs) were fabricated by radiofrequency plasma‐enhanced chemical vapor deposition (RF‐PECVD) in contin...

Multi-walled carbon nanotubes (MWCNTs) have been grown on 7 nm Ni-coated substrates consisting of crystalline silicon covered with a thin layer (10 nm) of TiN, by combining hot-wire chemical vapor deposition (HWCVD) and direct current plasma-enhanced chemical vapor deposition (dc PECVD), at 620 -C. Acetylene (C2H2) gas is used as the carbon source and ammonia (NH3) and hydrogen (H2) are used ei...

Figure 1: Scanning electron microscope image close-up of the trench, electrodes, and catalyst pads. The line outlining the trench shows the extent of the wet-etch undercut. Abstract: Semi-conducting carbon nanotubes (CNT) and germanium nanowires (GNWs) are desirable fieldeffect transistor (FET) elements because of their unique electrical properties and physical stability. Previous electromechan...

The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

In this work, antiwear nanoimprint templates were made by depositing and patterning diamondlike carbon DLC films on Si and quartz. A capacitively coupled plasma enhanced chemical vapor deposition PECVD system was configured to deposit 100 nm–1 m thick DLC films on Si and quartz substrates. These films were characterized with Raman spectroscopy, electron energy loss spectroscopy, atomic force mi...