We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

Magnetotransport properties of a pseudomorphic GaAs/ Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T =1.4 K and 4.2 K. The structure studied consists of a Si δ-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is ne = 1.67×1016 m−2. By illumination the density can be increased...

Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

We observe that ultrathin Fe/Cu(3)Au(001) films in the 6-13 A thickness range, beyond the thickness of pseudomorphism breakdown at room temperature, exhibit a temperature dependent structural phase transition in the range T(c) approximately 345-380 K. In the high temperature state the Fe film becomes pseudomorphic, while breakdown of pseudomorphism reversibly occurs as the system is cooled belo...

The band discontinuities between GaN and InN, as well as InGaN alloys, are key parameters for the design of nitride-based light emitters. Values reported to date are subject to large uncertainties due to strain effects at this highly mismatched interface. We have investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the in...

Carbon-tetrabromide CBr4 is utilized as the p-type doping source in modulation-doped pseudomorphic In0.3Ga0.7Sb /AlxGa1−xSb quantum well structure. Carbon delta-doping is achieved by switching off group III elements while the flow of CBr4 is on during the growth of AlSb barrier layer. The hole mobility of strained In0.3Ga0.7Sb quantum well decreases monotonically from 600 to 400 cm2 /V s while ...

We have fabricated and measured low barrier (30-150 meV) Schottky diodes using n+InGaAs/nGaAs pseudomorphic structures with up to 1.5% lattice mismatch. The I-V measurements at temperatures from 4 to 200 K show rectifying behavior and indicate transport mechanisms which range from tunneling to thermionic emission. The transport properties and barrier height determinations indicate that the band...

The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechamism in the Mon...