AbsfrucfBoron Transient Enhanced Diffusion (TED) is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak associated with the clustering of boron in the presence of excess interstitials. A consistent model for process simulation has to account for the formation of a variety of agglomerates associated with the excess point defect concentrations following io...

We analyze point defect bulk and surface diffusion near the crystal–vacuum interface show that is coupled with via atomic processes in intermediate subsurface layer. A set of self-contained differential equations describing interaction self-interstitials vacancies crystal proposed. The results existence fundamental relation between equilibrium concentrations defects at crystal. For case silicon...

In this paper, we propose an anisotropic diffusion scheme to detect defects in low-contrast surface images and, especially, aim at glass substrates used in TFT-LCDs (Thin Film Transistor-Liquid Crystal Displays). In a sensed image of glass substrate, the gray levels of defects and background are hardly distinguishable and result in a low-contrast image. Therefore, thresholding and edge detectio...

The incorporation of intrinsic point defects into a growing crystal and their subsequent agglomeration into larger defects are controlled by the solidification and subsequent cooling process. The evolution of intrinsic point defects in Silicon can generally be described by a system of reaction-diffusion equations for the concentration of selfinterstitials and vacancies. The main difficulty in q...

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 53...