A pulsed plasma enhanced chemical vapor deposition (PECVD) reactor is used for the preparation of thin polyacetylene films. A theoretical model based on the mass transport characteristics of the reactor is developed in order to correlate with experimentally obtained spatial deposition profiles for the acetylene plasma polymer film deposited within the cylindrical reactor. Utilizing a free radic...

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition ~PECVD! of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform ar...

Abstract This paper reports on the fabrication and characterization of high quality factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si) substrate (ρ = 10–20 cm). The thickness and the area of the insulating layer are optimized for high Q by fabricating inductors on very thick (∼50 μm) embedded silicon dioxide (SiO2) islands and 4–20 μm thick PECVD SiO2 coated standard...

The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input p...

Freestanding single-walled carbon nanotubes (SWCNTs) have been synthesized in a vertical direction, perpendicular to the growth substrate, using applied DC substrate bias in a microwave plasma-enhanced chemical vapor deposition (PECVD) synthesis process. The degree of alignment and spatial density of SWCNTs demonstrate a strong dependence on the magnitude of applied bias, with increased alignme...

Antimicrobial coatings deposited onto ultra high molecular weight polyethylene (UHMWPE) films were investigated using an atmospheric pressure - plasma enhanced chemical vapor deposition (AP-PECVD) process. Varying concentrations of a guanidine-based liquid precursor, 1,1,3,3-tetramethylguanidine, were used, and different deposition conditions were studied. Attenuated total reflectance - Fourier...

A single-layer graphene is synthesized on Cu foil in the absence of H(2) flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H(2) flow, hydrogen species are produced during the methane decomposition process into their active species (CH(x<4)), assisted with the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size...

We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapourphase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 ...

In studies of hydrogenated amorphous silicon (a-Si:H) n – i – p solar cells fabricated by rf plasma-enhanced chemical vapor deposition ~PECVD!, we have found that the maximum open circuit voltage (Voc) is obtained by incorporating p-type doped Si:H layers that are protocrystalline in nature. Specifically, these optimum p layers are prepared by PECVD in the a-Si:H growth regime using the maximum...

*Correspondence: Andrew Michelmore, Mawson Institute, Building V, Mawson Lakes Campus, University of South Australia, Mawson Lakes, 5095, SA, Australia e-mail: andrew.michelmore@ unisa.edu.au Plasma enhanced chemical vapor deposition (PECVD) can be used to fabricate surfaces with a wide range of physical and chemical properties and are used in a variety of applications. Despite this, the mechan...