نتایج جستجو برای: narrow band gap semiconductor

تعداد نتایج: 360555  

Novel method doped carbon with nanoparticle Cr2O3 and thin film has been studied in much thought in wavelength range, the doping can help new excellent physical and chemical properties for carbon, this application has a semiconductor feature. Nanocomposite thin film deposited on copper and glass substrates have been created by utilizing Spray Pyrolysis method. The prec...

2006
M. Li J. C. Li

Based on a thermodynamic model for size-dependent melting temperature, the size-dependent band-gap of low dimensional semiconductor compounds is modeled without any adjustable parameter. The model predicts an increase of the band-gap of nanoparticles and nanowires for IIBVIB and IIIB-VB semiconductor compounds, with decreasing their size, which is supported by available experimental and other t...

2002
Biplab Ganguli Kamal Krishna Saha Abhijit Mookerjee

Abstract. Band structure and optical properties of defectChalcopyrite type semiconductor ZnIn2Te4 have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn2Te4 is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function ǫ(E) = ǫ1(E)+ iǫ2(E) reveal dist...

Journal: :AIP Advances 2021

FeSi is known as a narrow-gap semiconductor showing peculiar temperature dependence of transport properties, which evoked debate for over 50 years. In this study, it shown that the electrical conductivity ?, Hall coefficient RH, mobility ?H, Seebeck S, and Nernst Q can be well explained in model includes conduction valence band with parabolic dispersions together top bottom impurity Hubbard ban...

Journal: :journal of optoelectronical nano structures 0
khojasteh zarei 1department of electronic engineering, sepidan branch,islamic azad university, sepidan, iran. ghahraman solookinejad department of physics, marvdashtbranch,islamic azad university, marvdasht, iran. masoud jabbari department of electrical engineering, marvdasht branch, islamic azad university, marvdasht, iran.

in this paper, a photonic crystal waveguide with point defects and lattice constant perturbations of +5%, -5% are being investigated. firstly waveguide structures with constant and specific parameters are being studied and photonic band gap diagrams for te/tm modes are depicted; then pulse propagation in the frequencies available in the band gap are shown. after that, effects of parameters like...

In this paper size effects, growth orientation and also doping by Ammonia molecule (NH3) on the carbon nanowire properties with saturated diamond structure by (DNw:H) have been investigated. This study was carried out using DFT theory and Kohn-Sham equation by self-consistent field (SCF) that performed by local density approximation (LDA). The nanowires morphology is cylindrical with [111] grow...

In this paper size effects, growth orientation and also doping by Ammonia molecule (NH3) on the carbon nanowire properties with saturated diamond structure by (DNw:H) have been investigated. This study was carried out using DFT theory and Kohn-Sham equation by self-consistent field (SCF) that performed by local density approximation (LDA). The nanowires morphology is cylindrical with [111] grow...

2013
C. A. Downing R. R. Hartmann I. A. Shelykh M. E. Portnoi O. V. Kibis R. J. Elliott S. W. Koch

We calculate the exciton binding energy in narrow band gap single-walled carbon nanotubes with and graphene nanoribbons, accounting for the quasi-relativistic dispersion of electrons and holes. Exact analytical solutions of the quantum relativistic two-body problem are obtained for several limiting cases. We show that the binding energy scales with the band gap, and conclude on the basis of the...

2010
P. Palacios P. Wahnon

In this work, we present frozen phonon and linear response ab-initio research into the vibrational properties of the CuGaS2 chalcopyrite and transition metal substituted (CuGaS2)M alloys. These systems are potential candidates for developing a novel solar-cell material with enhanced optoelectronic properties based in the implementation of the intermediate-band concept. We have previously carrie...

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