In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...

We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and dr...

Towards a novel magnetoresistance (MR) device with a carbon nanotube, we propose “nonmagnetic metal/zigzag nanotube encapsulating magnetic atoms/nonmagnetic metal” junctions. We theoretically investigate how spinpolarized edges of the nanotube and the encapsulated magnetic atoms influence on transport. When the on-site Coulomb energy divided by the magnitude of transfer integral, U/|t|, is larg...

We use numerical simulations to investigate the effect of electrostatics on the source and drain contacts of carbon nanotube field‐effect transistors. We find that unscreened charge on the nanotube at the contact‐channel interface leads to a potential barrier that can significantly hamper transport through the device. This effect is largest for intermediate gate voltages and for contacts near t...

We developed a computational model for investigating the cause for the high ionic current through a single-walled carbon nanotube nanofluidic device by considering the electrical double layer at a solid-liquid interface. With this model, we were able to examine the influence of the Gouy-Chapman-Stern electrical double layer and the solution concentration on the ionic conductance in the device. ...

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

The performance of carbon nanotube network (CNN) devices is usually limited by the high resistance of individual nanotube junctions (NJs). We present a novel method to reduce this resistance through a nanoscale chemical vapor deposition (CVD) process. By passing current through the devices in the presence of a gaseous CVD precursor, localized nanoscale Joule heating induced at the NJs stimulate...

An efficient and reliable numerical simulator for carbon nanotube field effect transistors suitable for device optimization and compact model development is presented. The simulator is based on a Schrödinger-Poisson solver and an efficient adaptive integration scheme for the charge and the current along the nanotube. While suitable error estimators for adaptive integration are studied extensive...