Image segmentation is a fundamental image processing technique to extract the required information from an image. The core element of any integrated circuit (IC) chip for signal metal oxide semiconductor field effect transistor (MOSFET). There are various limitations MOSFET in sub-nm process technology. This work introduces application new type MOSFET, which known as spatial wave function switc...

Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the shortchannel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise...

The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circuit cost and functionality, generating a new paradigm shift towards mobile computing. However, as the MOSFET dimensions are scaled below 30nm, electrostatic integrity and device variability become harder to control, degrading circuit performance. In order to overcome these issues, device engineers ...

A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTTs latching function and the MOSFETs switching function, the number of devices required for the D-FF circuit was gre...

This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-DD-TM-SG MOSFET. Y have been modeled using different small-signal equivalent circuit parameter which is used to find the Scattering parameters. These further employed computing S-parameters. are investigate microwave performance proposed device. The Unilateral Power Gain and maximum oscillation f...

We demonstrated soldering of an electrical component (the metal-oxide semiconductor field effect transistor (MOSFET)) on a printed circuit bord (PCB) via solder paste heated by microwave irradiation. The behavior the object soldered with in magnetic and electric were evaluated using various resonators. In field, was selectively confirmed that MOSFET connected onto PCB without any damage operate...

In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated same design rules and process platform. Therefore, have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold (Vth), body diode forward (VSD). It is shown that Ciss/Coss/Crss capacita...

Give a transistor-level circuit schematic and sketch a stick diagram for a Problem 11 Assume a CMOS inverter designed in the ON 0.5u CMOS process drives. Complementary MOSFET (CMOS) technology is widely used today to form circuits in numerous The circuit diagram of the CMOS inverter is shown in figure (4). 2.2 Charging and Discharging in CMOS Inverter...... 16. 2.3 Energy Recovery 5.31 Circuit ...

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integratedcircuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and fT characteristics. Good model accuracy is achieved against the measurements for a 0.25μm RF CMOS technology. The high ...

(RGD) circuits operating in very high frequency (VHF) switching is discussed. The specific RGD circuits are normally applied only for certain applications due to their design limitations and drawbacks. The isolation techniques must be considered to avoid mismatch and interruption of signals as well as the dead time delay, size of components and choice of optimized parameter values. Low conducti...