We report on the fabrication and operation of the first electrically pumped 1.55m vertical-cavity laser array for wavelength-division-multiplexing applications. The array consisted of four channels operating between 1509 and 1524 nm. Wafer bonding was used to integrate GaAs–AlGaAs distributed Bragg reflectors with an InP–InGaAsP active region.

Articles you may be interested in MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers Appl. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature Appl.

A highly programmable optical filter architecture is designed and a unit cell building block is fabricated in InP-InGaAsP with tunable inter-ring couplers. Simulated and measured bandpass filter responses for the 3-ring structure are presented. ©2010 Optical Society of America OCIS codes: 230.5750 Resonators, 250.5300 Photonic integrated circuits

We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400–1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitat...

The fundamental limits of electronic systems in communication networks motivated scholars to think of an alternative approach to overcome problems such as demand for wider bandwidths and heat dissipation. All-optical signal processing is demonstrated as a potential solution. A major improvement in cost and speed of networking systems is expected through replacing microelectronics by photonic ch...