نتایج جستجو برای: heterojunction gaa nw tfet

تعداد نتایج: 18213  

2017
SAEID MARJANI SEYED EbRAHIM HOSSEINI

In this paper, for the first time, the square-shaped extended source tunneling field-effect transistor (SES TFET) by means of the silicon carbide polytype (3C-SiC) and dopant pocket layer has been presented. By inserting the silicon carbide polytype as substrate and n-type pocket in the channel at the source edge, on-current is increased by about 10 times compared with the conventional SES TFET...

Journal: :ACS applied materials & interfaces 2011
Liqiang Yang Tim Zhang Huaxing Zhou Samuel C Price Benjamin J Wiley Wei You

The conventional anode for organic photovoltaics (OPVs), indium tin oxide (ITO), is expensive and brittle, and thus is not suitable for use in roll-to-roll manufacturing of OPVs. In this study, fully solution-processed polymer bulk heterojunction (BHJ) solar cells with anodes made from silver nanowires (Ag NWs) have been successfully fabricated with a configuration of Ag NWs/poly(3,4-ethylenedi...

Journal: :Journal of Computational Electronics 2022

We use the superposition method to model electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunneling field-effect transistor (TFET). The is formed from Ge/Si material in source/channel, respectively. modeling accomplished by considering space-charge regions at source–channel and drain–channel junctions channel region. surface potential region obtained applying pri...

2015
Hiroshi Fuketa Kazuaki Yoshioka Koichi Fukuda Takahiro Mori Hiroyuki Ota Makoto Takamiya Takayasu Sakurai

A tunneling field effect transistor (TFET) attracts attention, because TFET circuits can achieve better energy efficiency than conventional MOSFET circuits. Although design issues in ultra low voltage logic circuits, such as the minimum operatable voltage (V DDmin), have been investigated for MOSFET's, V DDmin for TFET's have not been discussed. In this paper, V DDmin of TFET logic circuits is ...

2009
S. Mookerjea R. Krishnan A. Vallett

The inter-band tunnel transistor (TFET) architecture features a subkT/q sub-threshold slope operation and can potentially support high ION/IOFF ratios over small gate voltages. Based on twodimensional numerical simulations, we investigate TFET in various material systems ranging from silicon to indium arsenide. TFET performance can be enhanced when heterojunctions are employed at the source sid...

2008
Husnu Emrah Unalan Pritesh Hiralal Daniel Kuo Bhavin Parekh Gehan Amaratunga Manish Chhowalla

The fabrication of flexible organic photovoltaics (OPVs) which utilize transparent and conducting single walled carbon nanotube (SWNT) thin films as current collecting electrodes on plastic substrates in zinc oxide nanowire (ZnO NW)/poly(3-hexylthiophene) (P3HT) bulk heterojunction photovoltaic devices is reported. The bulk heterojunctions for exciton dissociation are created by directly growin...

Journal: :Engineering research express 2023

Abstract The detection of biomolecules has been accomplished in this article by using the tunnel field effect transistor’s (TFET) bipolar nature. fabrication procedure made simpler, prices have gone down, and random dopant fluctuation (RDFs) eliminated charge plasma concept. objective work is to investigate performance a DopingLess- Dual Metal Gate- Cavity- HeteroJunction- Tunnel Field Effect T...

Journal: :Silicon 2022

Conventional biosensor designs are often vulnerable to issues like random dopant fluctuations (RDFs) and high thermal budgets due their design the device they based on. The main reason behind such is complexity of maintaining uniform doping levels throughout structure. This manuscript investigates a structure utilizing dual pocket junctionless SiGe-Heterostructured TFET overcome shortcomings. i...

Journal: :IEEE Journal of the Electron Devices Society 2021

This study investigates a device’s ability to boost its on-state current and subthreshold behavior using ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf 1-x Zr x O2 (HZO). A conventional (FET) pure hafnium ...

A. Abdolmohammadi, A. Mohebbifar M. Torki,

The effects of dietary supplemental guanidinoacetic acid (GAA) on performance, biochemical indices and meat pH of broilers with cold-induced ascites were studied. A total of 640 day-old male broiler chicks (Cobb 500) were assigned to four dietary treatments including control diet; control diet supplemented with either 0.6, 1.2 or 1.8 g of GAA per kg of feed. Each treatment was replicated in 8 b...

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