In a high switching frequency operation of current-source inverter (CSI), a conventional way to obtain unidirectional power switches is by connecting discrete diodes in series with the high speed power switches, i.e. power MOSFETs or IGBTs. However, these discrete diodes will cause extra losses to the power converter. This paper presents experimental test results of high switching frequency fiv...

Pulsed laser diodes may offer a smaller, less expensive alternative to conventional optoacoustic laser sources; however they do not provide pulse rates faster than a few tens of kHz and emit at wavelengths only within the near-infrared region. We investigated whether continuous wave (CW) laser diodes, which are available in visible and near-infrared regions, can be good optoacoustic light sourc...

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Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the ...

Semiconductor photonic devices such as laser diodes, light-emitting diodes, optical waveguides, directional couplers, electrooptic modulators, and photodetectors have important applications in lightwave technology systems. To understand the physics and the operational characteristics of these photonic devices, we have to understand the fundamental principles. In this chapter, we review some of ...

Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as...

The avalanche noise characteristics of Al0 8Ga0 2As have been measured in a range of p-i-n and n-i-p diodes with i-region widths varying from 1.02 to 0.02 m. While thick bulk diodes exhibit low excess noise from electron initiated multiplication, owing to the large ratio (1 ), the excess noise of diodes with 0 31 m were found to be greatly reduced by the effects of dead space. The thinnest diod...

In this paper we present our recent progresses towards effkient light emitting diodes based on porous silicon. We will touch the two following topics: 1) All porous silicon microcavities. Through the formation of a planar optical cavity it is possible to vary the spontaneous emission rate of porous silicon films. We demonstrate this by showing luminescence, and time resolved luminescence measur...

The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well...

Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of AlxGa1−xAs ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric fi...