نتایج جستجو برای: carrier states

تعداد نتایج: 520248  

2013
K. Alberi B. Fluegel H. Moutinho R. G. Dhere J. V. Li A. Mascarenhas

Thin-film polycrystalline semiconductors are currently at the forefront of inexpensive large-area solar cell and integrated circuit technologies because of their reduced processing and substrate selection constraints. Understanding the extent to which structural and electronic defects influence carrier transport in these materials is critical to controlling the optoelectronic properties, yet ma...

Journal: :AIP Advances 2023

A new model for incomplete ionization of dopants in Si is presented, where the Fermi level free carriers may displace with respect to case full activation dopants. The curves ratio free-carrier density and active-dopants vs doping, which are calculated at partial model, overlap exactly same quantity a reported model. Calculations performed without parameterizations states occupancy probability ...

Journal: :JAMA 2007
Jürgen May Jennifer A Evans Christian Timmann Christa Ehmen Wibke Busch Thorsten Thye Tsiri Agbenyega Rolf D Horstmann

CONTEXT The geographical distributions of hemoglobin S (HbS), hemoglobin C (HbC), and alpha+-thalassemia (-alpha) strongly suggest balancing selection with malaria. However, whereas several studies indicate that the HbS carrier state protects against all major forms of clinical malaria, malaria protection on clinical grounds has been more difficult to confirm for HbC and -alpha, and questions r...

Journal: :Transactions of the American Ophthalmological Society 2014
Janey L Wiggs Anne M Langgurth Keri F Allen

PURPOSE CYP1B1 mutations cause autosomal recessive congenital glaucoma. Disease risk assessment for families with CYP1B1 mutations requires knowledge of the population mutation carrier frequency. The purpose of this study is to determine the CYP1B1 mutation carrier frequency in clinically normal individuals residing in the United States. Because CYP1B1 mutations can exhibit variable expressivit...

Journal: :Nanoscale 2012
Yuriy I Mazur Vitaliy G Dorogan Morgan E Ware Euclydes Marega Mourad Benamara Zoryana Ya Zhuchenko Georgiy G Tarasov Christoph Lienau Gregory J Salamo

A strong dependence of quantum dot (QD)-quantum well (QW) tunnel coupling on the energy band alignment is established in hybrid InAs/GaAs-In(x)Ga(1-x)As/GaAs dot-well structures by changing the QW composition to shift the QW energy through the QD wetting layer (WL) energy. Due to this coupling a rapid carrier transfer from the QW to the QD excited states takes place. As a result, the QW photolu...

2008
J. MARTIN

The electronic structure of graphene causes its charge carriers to behave like relativistic particles. For a perfect graphene sheet free from impurities and disorder, the Fermi energy lies at the so-called ‘Dirac point’, where the density of electronic states vanishes. But in the inevitable presence of disorder, theory predicts that equally probable regions of electron-rich and hole-rich puddle...

Journal: :Nano letters 2008
Aditya D Mohite Prasanth Gopinath Hemant M Shah Bruce W Alphenaar

The field-dependent photocurrent spectrum of individual carbon nanotubes is measured using a displacement photocurrent technique. A series of peaks is observed in the photocurrent corresponding to both excitonic and free carrier transitions. The photocurrent peak corresponding to the ground state exciton increases by a factor of 200 beyond a critical electric field, and shows both red and blue ...

2016
Adriana Pietropaolo Ciro Leonardo Pierri Ferdinando Palmieri Martin Klingenberg

The data reported herein are related to the article entitled: "The switching mechanism of the mitochondrial ADP/ATP carrier explored by free-energy landscapes" (Pietropaolo et al., 2016) [1]. We report the coordinates of the ADP/ATP carrier (AAC2) in the presence and absence of adenine and guanine nucleotides in the c-, intermediate- and m-states obtained from the free-energy simulations and co...

Journal: :Physical review letters 2007
A G Petukhov Igor Zutić Steven C Erwin

We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example, we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasi...

فتحی پور , مرتضی, مرادی نسب, مهدی,

In this paper a compact current-voltage model for MOSFET-like Carbon Nanotube Field Effect Transistors (MOSFET-like CNFET) is presented. To model these devices the one-dimensional drain/source current equation obtained from Landauer approach must be solved self-consistently with the equation relates the Fermi surface and carrier concentration. Also, numerically solve of the integral over densit...

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