نتایج جستجو برای: buried layer

تعداد نتایج: 292998  

2016
Constantinos A. Valagiannopoulos Nikolaos L. Tsitsas Ari H. Sihvola

A ground-penetrating radar (GPR) antenna excites a perfectly electric conducting (PEC) inclusion buried inside the ground. One of the main problems in the detection of the PEC inclusion via external measurements is its poor scattering response due to attenuation. Hence, increasing the scattered power generated by the inclusion is of great practical interest. To this direction, the main purpose ...

2005
Peter C. Chu Michael Cornelius

The suspended sediment layer occupies the lower water column. Presence of the suspended sediments creates a volume scattering layer which affects acoustic detection. Understanding the acoustic effects of the suspended sediment layer leads to the development of acoustic sensors with capability to scan the seafloor and to detect ordnance such as sea mines. 2. Comprehensive Acoustic Simulation Sys...

ژورنال: علوم آب و خاک 2003
احمد جلالیان, , شمس‌الله ایوبی, , مصطفی کریمیان اقبال, ,

Investigation of paleosols plays a great role in paleoecological and paleoclimatological studies. They are also important in soil survey and planning, as they exhibit characteristics different from younger soils. Paleosols are those soils which formed under conditions different from present ones, and are either buried within sedimentary sequences or those which lie on persisting surfaces. Altho...

2016
Soo Gil Kim Yudi Wang I-Wei Chen

A novel relaxation phenomenon occurs in buried SrRuO3 layers in strained (Ca1-xSrx) (Zr1-xRux)O3/SrRuO3/SrTiO3 (001) thin film system. The lightly strained SrRuO3 buried layer is initially clamped by the SrTiO3 substrate. After a heavily strained (Ca1-xSrx) (Zr1-xRux)O3 overlayer is deposited, localized strain relaxation develops in the buried layer. This is manifested by a crosshatch pattern o...

2011
J. K. Listebarger H. G. Robinson M. E. Law J. A. Slinkman

A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Gef implantation) and excess point defects generated from a low dose 1 X 10’4/cm2 Bf implant into silicon. The boron doping spike was grown in by chemical vapor deposition at a depth of 8000 A below the surface. The intrinsic diffusivity of the boron in the doped epilayer was deter...

Journal: :IEEJ Transactions on Electronics, Information and Systems 2002

Journal: :Journal of the Japan Institute of Metals and Materials 2001

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