نتایج جستجو برای: antimonide

تعداد نتایج: 342  

Journal: :Zeitschrift für Kristallographie - New Crystal Structures 2010

Journal: :Zeitschrift für Kristallographie - New Crystal Structures 2009

2015
Arathy Varghese Ajith Ravindran

Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...

Journal: :Zeitschrift für Kristallographie - New Crystal Structures 2009

Journal: :Acta Crystallographica Section A Foundations of Crystallography 2005

2014
J. J. SCHEER P. ZALM

X-ray analysis of Na2KSb a photoemissive material discovered by Sommer has led to the determination of its crystal structure. The unit cell is described by the space group Fm3m-01l5 with four antimony atoms at (0,0,0; O,t,!; t,O,t; t,t,O) + 0,0,0; four potassium atoms at ( ) + t,t,! and eight sodium atoms at ( ) + t,t,t and t,t,t. The crystal structure of Na2KSb has a great resemblance to that ...

Journal: :Science 1999
Facsko Dekorsy Koerdt Trappe Kurz Vogt Hartnagel

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, whi...

2014
DANTE DEMEO COREY SHEMELYA CHANDLER DOWNS ABIGAIL LICHT EMIR SALIH MAGDEN TOM ROTTER CHETAN DHITAL STEPHEN WILSON GANESH BALAKRISHNAN THOMAS E. VANDERVELDE

We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determin...

Journal: :Science 2000
Solin Thio Hines Heremans

A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas, respectively. For inhomogeneities of sufficiently large diameter relative to that of the surrounding disk, the resista...

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