The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube FETs are computed via a self-consistent solution to the 2-D potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain c...

An increasing part of the semiconductor device community is using SOI wafers for the fabrication of modern CMOS generations (FINFET [1], Schottky barrier transistors [2], (bio-) sensor applications, optical devices and also as test vehicles to study the fundamental properties of 1D and 2D silicon structures. For SOI thicknesses below the Debye length it becomes interesting to study metal-Si con...

Abstract In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability to control off-state leakage current due to quantum tunneling and thermionic emission between the source and drain as well as band-to-band tunneling between the body and drain. Lateral S/D...

Epitaxial ultra-thin titanium dioxide films of 0.3 to ~7nm thickness on a metal single crystal substrate have been investigated by high resolution vibrational and electron spectroscopies. The data complement previous morphological data provided by scanned probe microscopy and low energy electron diffraction to provide very complete characterisation of this system. The thicker films display elec...

We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region ~50–200 mm!, where Si homojunction interfacial workfunction internal photoemission ~HIWIP! detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and t...

Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxidesemiconductor (CMOS) field effect transistors (FETs) variability i...

As novel applications using terahertz radiation are developed, there is an increased demand for sensitive terahertz detectors. This has led to new approaches for enhancing the response of terahertz detectors. Results were recently reported on the terahertz response of a p-type AlGaAs/GaAs, n-type GaAs/AlGaAs, n-type GaN/AlGaN, and p-type GaSb/GaSb Interfacial Workfunction Internal Photoemission...

The efficiency of flexible photovoltaic and organic light emitting devices is heavily dependent on the availability of flexible and transparent conductors with at least a similar workfunction to that of Indium Tin Oxide. Here we present the first study of the work function of large area (up to 9 cm(2)) FeCl3 intercalated graphene grown by chemical vapour deposition on Nickel, and demonstrate va...