A design methodology for wideband CMOS low noise amplifier (LNA) with source degeneration is presented. By allowing an arbitrary source degeneration and employing a general input matching network, the minimum noise figure of the proposed wideband CMOS LNA can be made independent of the transistor width by properly choosing the source degeneration reactance. This result shows that the proposed t...

This article presents a low-power fully-differential 3.5GHz wideband complementary metal oxide semiconductor (CMOS) lownoise amplifier (LNA) based on the LC-ladder match network approach. To have low power consumption and high power gain, two commonsource stages are cascaded for reusing the bias current. To have wideband low noise figure, the gate width of the input transistor is determined fro...

Many modern EW systems require low noise receivers capable of withstanding wide input power variations over a multioctave bandwidth. These receivers are necessary to protect sensitive components from RF overdrive or to remove AM modulation from incoming signals. Further, multichannel system designs and proximity to the receiver antenna generate requirements for low power and small package size....

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Abstract A hybrid switching amplitude modulator for class-E2 EDGE polar transmitters is proposed. To achieve both high-efficiency and high-speed, it consists of a wideband buffered linear amplifier as a voltage source and a hysteresis-controlled switching amplifier as a dependent current source. The novel linear amplifier has a high current driving capability of approximately 160mA with a bandw...

This paper presents a ultra wideband low noise amplifier for 6GHz Applications. This proposed LNA is the extension of inductively common source amplifier and in this design we used transistor multifingering techniques in order to reduce noise and improves gain. This LNA is simulated by using UMC .18um CMOS mixed signal/RF process in cadence virtuoso. In this design, used current source biasing,...

In this paper, the significance of linearity for UWB front-end circuit is discussed. The effects of strong narrow band interferer on UWB signal are investigated. Wideband linearization techniques for UWB LNA are first proposed in this work. A high linearity UWB LNA is designed in TSMC 0.18μ CMOS process The simulation results show that the designed LNA exhibits very high IIP3 (6.9~13.8 dBm) whi...

Increasing demands of portable wireless devices have motivated the development of CMOS radio frequency integrated circuits (RFIC). In wireless system Low Noise Amplifier is the first stage of any RF Receiver design. Performance of RF receiver mainly depends on the effectiveness of LNA. The main objective of the LNA design is to get good gain with minimum noise generation for the entire operatin...