Consider the typical VCSEL structure in Figure 1. In this example, the gain region consists of three quantum wells placed in a onewavelength thick spacer region. On either side of the spacer region, there are extremely high reflectivity mirrors made from semiconductors that have total reflectivity greater than 99.5%. The mirrors are fabricated from altering material layers that are λ/4 thick to...

This article describes the process of transferring an 850 nm VCSEL structure to devices emitting at 895 nm, a wavelength required for cesium-based atomic clocks. We discuss all the effects to be considered and present photoluminescence measurements of the modified quantum well structure. In addition, the influence of δ-doping in distributed Bragg reflectors on VCSEL characteristics, namely thre...

Planar microcavities with distributed Bragg reflectors (DBRs) host, besides confined optical modes, also mechanical resonances due to stop bands in the phonon dispersion relation of the DBRs. These resonances have frequencies in the 10- to 100-GHz range, depending on the resonator's optical wavelength, with quality factors exceeding 1,000. The interaction of photons and phonons in such optomech...

In this paper we report on a laser range finding system built using the self-mixing effect in a Vertical-Cavity Surface-Emitting Laser (VCSEL). The distance to the target in these range finders is usually calculated by determining the time interval between the peaks in the resulting power fluctuations that are produced by the selfmixing effect. In this study we propose the use of a method that ...

We report the first room temperature optical spin-injection of a dilute nitride 1300 nm vertical-cavity surface-emitting laser (VCSEL) under continuous-wave optical pumping. We also present a novel experimental protocol for the investigation of optical spin-injection with a fiber setup. The experimental results indicate that the VCSEL polarization can be controlled by the pump polarization, and...

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 lm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VC...

Abstract In this study, we realize the high-power output of a single-mode 894 nm vertical-cavity surface-emitting laser (VCSEL) at high temperature. The effects dimensional parameters oxide aperture and surface relief on transverse mode threshold gain VCSEL were analyzed. Through collaborative optimization relief, with 8 µm diameter 5 inner can operate temperature 365 K power 2.02 mW side-mode ...

Optically injection-locked single-wavelength gain-switching VCSEL based all-optical converter is demonstrated to generate RZ data at 2.5 Gbit/s with bit-error-rate of 10(-9) under receiving power of -29.3 dBm. A modified rate equation model is established to elucidate the optical injection induced gain-switching and NRZ-to-RZ data conversion in the VCSEL. The peak-to-peak frequency chirp of the...

A low-power GaAs-based monolithically integrated phototransceiver, consisting of a high-gain heterojunction phototransistor (HPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor exhibits a responsivity of 60A/W at an...