Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...

So effectively, you can say that the capacitor acts as a low-pass filter when it in a transistor circuit, it blocks the DC and acts as a low impedance path for AC. Official Full-Text Publication: Single Transistor Active Filters: What is Possible and The results presented here fill both a circuit-theoretic gap and an application-oriented gap related to single a case is the low-pass filter numbe...

a high accurate and low-voltage analog cmos current divider which operates with a single power supply voltage is designed in 0.18µm cmos standard technology. the proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. the proposed divider is modeled with neural network while tlbo algorithm is used to optimize it. the proposed optimization...

In this work, an enzymatic liquid-gated field-effect-transistor sensor based on chemically reduced graphene oxide film was develop for determination of acetylthiocholine in aqueous conditions. The device designed with interdigitated electrode configuration and then manufactured by combining lithography chemical vapor deposition techniques clean room. Graphene material (prepared Hummer method) u...

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, simulated including a full 2D Poisson equation and drift-diffusion model with mobilities deduced by direct numerical solution semiclassical Boltzmann equations for charge transport suitable discontinuous Galerkin approach. The critical issue in transistor difficulty fixing off state which require...

This paper is based on analysis of a common source - common gate low noise transconductance amplifier (CS-CG LNTA). Conventional noise analyses equations are modified by considering to the low output impedance of the sub-micron transistors and also, parasitic gate-source capacitance. The calculated equations are more accurate than calculated equations in other works. Also, analyses show that th...

We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when ...

This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the...

Memristor crossbar arrays can compose the efficient hardware for artificial intelligent applications. However, requirements a linear and symmetric synaptic weight update low cycle-to-cycle (C2C) device-to-device variability as well sneak-path current issue have been delaying its further development. This study reports on thin-film amorphous oxide-based 4×4 1-transistor 1-memristor (1T1M) crossb...

Easy tunable oscillator based on current amplifier and diamond transistors with buffers is presented in the paper. Electronic adjusting of oscillation frequency is easy possible due to controllable current gain of used current amplifier. All capacitors of the oscillator are grounded. The characteristic equation, condition of the oscillation and parasitic influences of real active components are...