Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. Existing process simulators cannot accurately model some of these effects. We describe a 2-D process simulator PREDICT2 that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of impurities in silicon by using phenomen...

In silicon processing technology one of the most important current objectives is to achieve a controlled impurity doping in the crystal. Point defects and defect complexes present in the crystal influence in an important way the electrical activity and the diffusion properties of the dopants. In this thesis, defect complexes in silicon are studied by using quantum-mechanical electronic-structur...

Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo KLMC simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping mechanisms, and the stress dependence of transition rates obtained from density functional theory calculation results. Vacancy-mediated interdi...

Recent experiments show the thermal growth of dislocation lines in unltapure bcc He. The activation energy for the growth of the dislocation lines is found to agree with the activation energy of mass diffusion. We propose that these dislocations are topological defects in the phase of the complex order-parameter which describes the dynamic zero-point atomic correlations, unique to the bcc phase...

We have investigated transient enhanced diffusion of phosphorus in silicon following implantation with silicon or argon ions at low doses. Both conditions show uphill diffusion of phosphorus due to the defect gradients, but the resulting profiles are quite different because of differences in the initial defect distributions. These experiments support an interstitial pair diffusion mechanism for...

This paper presents a 3D boundary element model (BEM), formulated in the frequency domain, to simulate heat diffusion by conduction in the vicinity of 3D cracks. The model intends to contribute to the interpretation of infrared thermography (IRT) data results and to explore the features of this nondestructive testing technique (NDT) when it is used to detect and characterize defects. The defect...

the cluster representation matrices have already been successfully used to enumerate close-packed vacancy clusters in all single-lattice crystals [i, 2]. point defect clusters in double-lattice crystals may have identical geometry but are distinct due to unique atomic postions enclosing them. the method of representation matrices is extended to make it applicable to represent and enumerate the ...

The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion-implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of the opposite type. Analysis of the rela...

The presence of sharp surface reconstruction or diffraction spots is often taken as an indicator of a well-ordered surface. We present results obtained using transmission electron microscopy in ultra-high vacuum (UHV) which demonstrate that even if the surface is well-ordered and reconstructed, there may be very high defect concentrations just below the surface of the order of 10h1_1013 cm 2. T...