نتایج جستجو برای: pn semiconductor detector

تعداد نتایج: 128614  

2011
Veronique REBUFFEL Jean RINKEL Guillaume BELDJOUDI Andrea BRAMBILLA

Material identification in radiography is traditionally performed by dualenergy systems, using double exposure technique or two-layers detectors. Performance of such systems results from the closeness of the materials to be discriminated, from photonic noise, and energetic discriminating power of the detector. For difficult problems such as explosive detection in luggage, conventional dual-ener...

2000
Hong Gil Kim Chang Yong Jung Iickho Song Jooshik Lee Seokho Yoon

In this paper, signed-rank based nonparametric detectors are used for pseudonoise (PN) code acquisition in direct sequence spread spectrum (DS/SS) systems. We first derive the locally optimum rank (LOR) detector, and then propose a locally suboptimum rank (LSR) detector and a modified signed-rank (MSR) detector using approximate score functions. We compare the single-dwell scheme without the ve...

2016
L. Alloatti R. J. Ram

Articles you may be interested in Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor Appl.

2008

COMMERCIAL VISION SYSTEMS In the last few years thermal imaging has found its way into many more commercial applications. Most of these applications require a low cost product with an uncooled detector. These sensors image in the LWIR, or longwave infrared band (7 14 μm). Different types of uncooled detectors are available on the market. Since the infrared detector is the heart of any thermal i...

Journal: :journal of sciences islamic republic of iran 0

the absorption properties of charge transfer organic semiconductor ttf-tcnq (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on kbr singlecrystal, quartz and glass substrates in far infrared have been investigated. an absorption edge at ?10 ??m was observed. photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. the results show an e...

2008
Tomislav Matić Tomislav Švedek Marijan Herceg

The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for b...

2010
Chu-Hsuan Lin Chee Wee Liu

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

The absorption properties of charge transfer organic semiconductor TTF-TCNQ (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on KBr singlecrystal, quartz and glass substrates in far infrared have been investigated. An absorption edge at ?10 ??m was observed. Photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. The results show an el...

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