نتایج جستجو برای: piezoresistors

تعداد نتایج: 61  

Journal: :Micromachines 2023

The longstanding demands for micropressure detection in commercial and industrial applications have led to the rapid development of relevant sensors. As a type long-term favored device based on microelectromechanical system technology, piezoresistive sensor has become powerful measuring platform owing its simple operational principle, favorable sensitivity accuracy, mature fabrication, low cost...

Journal: :Nanotechnology 2012
Michael A Cullinan Robert M Panas Martin L Culpepper

This paper presents the design and fabrication of a multi-axis microelectromechanical system (MEMS) force sensor with integrated carbon nanotube (CNT)-based piezoresistive sensors. Through the use of proper CNT selection and sensor fabrication techniques, the performance of the CNT-based MEMS force sensor was increased by approximately two orders of magnitude as compared to current CNT-based se...

2017
Ian Chuang Chee Yee Kwok

This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films f...

Journal: :Silicon 2021

In silicon-based piezoresistive pressure sensor, the accuracy of sensor is affected mainly by thermal drift and sensitivity varies with rise in temperature. Here, temperature effects on desired representation are analysed. Use smart material Carbon nanotubes (CNT) a few effective compensation techniques presented this study to reduce effect sensor. Resistive employed extra piezoresistors Negati...

Journal: :The Review of scientific instruments 2008
J Richter M B Arnoldus O Hansen E V Thomsen

We present a four point bending setup suitable for high precision characterization of piezoresistance in semiconductors. The compact setup has a total size of 635 cm(3). Thermal stability is ensured by an aluminum housing wherein the actual four point bending fixture is located. The four point bending fixture is manufactured in polyetheretherketon and a dedicated silicon chip with embedded piez...

2013
Michael A. Cullinan Martin L. Culpepper

Carbon nanotube (CNT)-based piezoresistive strain sensors have the potential to outperform traditional silicon-based piezoresistors in MEMS devices due to their high strain sensitivity. However, the resolution of CNT-based piezoresistive sensors is currently limited by excessive 1/f or flicker noise. In this paper, we will demonstrate several nanomanufacturing methods that can be used to decrea...

2007
Chenyang Xue Shang Chen Hui Qiao Wendong Zhang Jijun Xiong Binzhen Zhang Guojun Zhang

This paper describes the design, simulation, fabrication and test results of a novel MEMS two axis accelerometer, which is based on piezoresistive detection. This kind of sensor consists of four vertical cantilever beams with attached plastic cylinder in the center of the structure. A simplified analytical model is established to describe the accelerometer’s mechanical behaviour. Finite element...

2012
Nina Korlina Madzhi Anuar Ahmad

The measurement of glucose is of great importance in clinical diagnosis. This is especially essential for the continuous monitoring for example in a patient suffering from diabetes mellitus which is caused by the high levels of glucose in human physiological fluid. Even though many research have been done for glucose measurement, there are still many research in progress to develop new methods ...

2005
Lucia Beccai Stefano Roccella Alberto Arena Francesco Valvo Pietro Valdastri Arianna Menciassi Maria Chiara Carrozza Paolo Dario

0 d This paper presents the design and development of a silicon-based three-axial force sensor to be used in a flexible smart interface for biomehanical measurements. Normal and shear forces are detected by combining responses from four piezoresistors obtained by ion implantation n a high aspect-ratio cross-shape flexible element equipped with a 525 m high silicon mesa. The mesa is obtained by ...

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