Abstract Bacterial infection of chronic wounds is a major healthcare problem that affects the quality life millions patients worldwide and leads to substantial cost burden. This project focused on manufacture potential wound healing agent. Plasma polymers from oregano secondary metabolites (PP‐OSMs) were fabricated by radiofrequency plasma‐enhanced chemical vapor deposition (RF‐PECVD) in contin...

Multi-walled carbon nanotubes (MWCNTs) have been grown on 7 nm Ni-coated substrates consisting of crystalline silicon covered with a thin layer (10 nm) of TiN, by combining hot-wire chemical vapor deposition (HWCVD) and direct current plasma-enhanced chemical vapor deposition (dc PECVD), at 620 -C. Acetylene (C2H2) gas is used as the carbon source and ammonia (NH3) and hydrogen (H2) are used ei...

Figure 1: Scanning electron microscope image close-up of the trench, electrodes, and catalyst pads. The line outlining the trench shows the extent of the wet-etch undercut. Abstract: Semi-conducting carbon nanotubes (CNT) and germanium nanowires (GNWs) are desirable fieldeffect transistor (FET) elements because of their unique electrical properties and physical stability. Previous electromechan...

The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

In this work, antiwear nanoimprint templates were made by depositing and patterning diamondlike carbon DLC films on Si and quartz. A capacitively coupled plasma enhanced chemical vapor deposition PECVD system was configured to deposit 100 nm–1 m thick DLC films on Si and quartz substrates. These films were characterized with Raman spectroscopy, electron energy loss spectroscopy, atomic force mi...

Carbon containing zirconia films are deposited from chemical vapor deposition (CVD) and plasma enhanced (PECVD), as being used thermal barrier coatings for many applications. Their conductivity has been measured temperatures ranging room temperature up to 450 K using the 3 ω method. It is shown that samples exhibit a lattice an electronic contribution reaching values 13 W/m/K CVD 5 PECVD at K. ...

The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multi...

We present a powerful kinetic Monte Carlo (KMC) algorithm that allows one to simulate the growth of nanocrystalline silicon by plasma enhanced chemical vapor deposition (PECVD) for film thicknesses as large as several hundreds of monolayers. Our method combines a standard n-fold KMC algorithm with an efficient Markovian random walk scheme accounting for the surface diffusive processes of the sp...

1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...