We propose and demonstrate a novel nanoscale resonant metal-semiconductor-metal (MSM) photodetector structure based on silicon fins self-aligned to metallic slits. This geometry allows the center wavelength of the photodetector's spectral response to be controlled by the silicon fin width, allowing multiple detectors, each sensitive to a different wavelength, to be fabricated in a single-step p...

In this paper, we present an ensemble Monte Carlo model to calculate the time response for GaAs MSM photodetectors. Our model includes two valleys and two bands for electrons and holes respectively. We simulate optical pulse absorption and trajectory of carriers to calculate electron and hole currents. Also, we calculate the effect of different voltages and optical pulses on photocurrent. To va...

The integration of nano structures with opto-electronic devices has many potential applications. It allows the coupling of more light into or out of the device while decreasing the size of the device itself. Such devices are reported in the VIS and NIR regions. However, making plasmonic structures for the UV region is still a challenge. Here, we report on a UV nano-antenna integrated metal semi...

Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral microreflectometry. The compositions of a-SiCN thin films deposited with different CH4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the ind...

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...

We present a phenomenological model for the photocurrent transient relaxation observed in ZnO-based metal-semiconductor-metal (MSM) planar photodetector devices based on time-resolved surface band bending. Surface band bending decreases during illumination, due to migration of photogenerated holes to the surface. Immediately after turning off illumination, conduction-band electrons must overcom...

A105Ga05Sb/GaSb meta1semiconductor-meta1 (MSM) detectors have been prepared on semi-insulating InP substrates. The molecular beam epitaxially grown samples on differently oriented substrates exhibit different types of conductivity. The Schottky barrier height between Al and Al0 5Ga05Sb grown on (311)B oriented substrates is 0.6 eV, while the Al contacts on (100) sample exhibit ohmic behavior. T...