The short circuit withstand energy (SCWE) variations, and time (SCWT) of planar trench silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices are studied after exposure to a total ionizing dose (TID). results for ON bias explored. SCWE SCWT SiC MOSFET tested TID with gamma irradiation. A higher degradation phenomenon the observed MOSFET. physical mechanis...

A reliable configuration for triggering a series string of power metal oxide semiconductor (MOS) devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each metal oxide semiconductor field effect transistor (MOSFET), except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage...

The synchronous buck circuit is in widespread use to provide “point of use” high current, low voltage power for CPU’s, chipsets, peripherals etc. In the synchronous buck converter, the power stage has a “high-side” (Q1 below) MOSFET to charge the inductor, and a “Low-side” MOSFET which replaces a conventional buck regulator’s “catch diode” to provide a low-loss recirculation path for the induct...

A current mode sample and hold circuit is presented in this paper at 180nm technology. The major concerns of VLSI are area, power, delay and speed. Hence, we have used a MOSFET in triode region in the proposed architecture for voltage to current conversion instead of a resistor being used in previously proposed circuit. The proposed circuit achieves high sampling frequency and with more accurac...

This paper introduces a new design of penternary inverter gate based on graphene nanoribbon field effect transistor (GNRFET). The penternary logic is one of Multiple-valued logic (MVL) circuits which are the best substitute for binary logic because of its low power-delay product (PDP) resulting from reduced complexity of interconnects and chip area. GNRFET is preferred over Si-MOSFET for circui...

The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple and accurate characterization method for the self-heating effect (SHE) in SOI MOSFET. The ac output conductance at a chosen bias point is measured at several frequencies to determine the thermal resistance ( ) and thermal capacitance ( ) associated...

A self-cascading CMOS circuit for operation in weak inversion is presented. The self-cascoding MOSFET circuit has been shown to exhibit greater than twentY:'fold increase in the output resistance, without paying virtually any penalty in real estate and power consumption. The circuit has been used to increase the gain in the front stage of operational amplifiers, and to obtain improved performan...

The synchronous buck circuit is in widespread use to provide “point of use” high current, low voltage power for CPU’s, chipsets, peripherals etc. In the synchronous buck converter, the power stage has a “high-side” (Q1 below) MOSFET to charge the inductor, and a “Low-side” MOSFET which replaces a conventional buck regulator’s “catch diode” to provide a low-loss recirculation path for the induct...

A non-volatile floating-gate MOSFET based trimmable current cell suitable for use in a current steering DAC and implemented in CMOS technology is presented. The current source can be programmed to an accuracy corresponding to 12-bit resolution using either hot electron injection to add charge to the floating-gate or hot hole injection to remove charge. The output current from the circuit can be...

In this paper a new geometric-mean circuit for current-mode square-root domain filters (SRD) is presented. The geometric-mean circuit employs MOSFET transistors that are operating in both strong inverted saturation and triode regions and works in low supply voltage. Simulation results by HSPICE confirm the validity of the proposed design technique.