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For organic thin-film transistors (OTFTs) made of solution processed stacks semiconductor and dielectric materials, it is a grand challenge to eliminate the leakage current paths. With top-gate bottom-contact structure, this work introduces strong dipole interfacial layer self-assembled monolayer (SAM) molecules at metal-semiconductor contacts suppress minority carrier injection for low stable ...

In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with g...

quantum-dot cellular automaton (qca) is a novel nanotechnology with a very different computational method in compared with cmos, whereas placement of electrons in cells indicates digital information. this nanotechnology with specifications such as fast speed, high parallel processing, small area, low power consumption and higher switching frequency becomes a promising candidate for cmos technol...

flow regime in dam's bottom outlet is divided in pressurized flow and free surface flow by the gate located for discharge control. down stream tunnel involves high velocity multi component air –water flow studied by mathematical model. in this research work, we used finite volume mixture two phase flow model. because of high reynolds number, standard two equations k-e turbulence model was ...

Since economic liberalization period, Chinese housing typologies have experienced a dramatical change. From the traditional Siheyuan building type to the current gated communities, which prototype has become the most widespread residential housing type in modern China Cities. At the same time, many negative feedbacks about the city life have been appearing, such as traffic congestion, the loss ...

Coupling phenomenon between two Al/SiO2/Si(p) metal–insulator–semiconductor (MIS) tunneling diodes (TD) with various thin oxide thicknesses was studied in detail. When the bias voltage at one MIS TD is positive enough, saturation currents of neighboring TDs concentric gate structures would be approximately same due to current coupling effect though areas these devices are different. With thinne...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Yann-Michel Niquet, a) Hector Mera, and Christophe Delerue L Sim, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, France IM2NP, UMR CNRS 6242, Marseille, France IEMN Dept. ISEN, UMR CNRS 8520, Lille, France We discuss the scattering of electrons and holes by charged dopant impurities in 〈001〉, 〈110〉 and 〈111〉 gate-all-around silicon nanowires (Si NWs) with diameters in the 2-8 nm range. We show...