High-power laser diode arrays are used for a variety of space-based laser programs as an energy source for diode-pumped solid-state lasers. Specifically, 1064 nm Nd:YAG lasers require laser diode arrays emitting at a wavelength of 808 nm that operate at quasi-cw peak powers of 100 Watts per bar. Reliability and performance data is needed for these components; particularly for operation in a sat...

Enhancing light–matter interactions on a chip is of paramount importance for classical and quantum photonics, sensing, energy harvesting applications. Several photonic geometries have been developed, allowing high extraction efficiencies, enhanced interactions, control over the spontaneous emission dynamics solid-state light sources. To this end, device geometry resilient to nanofabrication imp...

Monolayer (1L) semiconducting transition metal dichacogenides (TMDs) possess remarkable physical and optical properties, promising for a wide range of applications from nanoelectronics to optoelectronics such as light-emitting and sensing devices. Here we report how the molecular adsorption can modulate the light emission and electrical properties of 1L WS2. The dependences of trion and exciton...

The III-V semiconductor nanowires (NWs) have a great potential for applications in a variety of future electronic and photonic devices with enhanced functionality. In this work, we employ polarization-resolved microphotoluminescence (μ-PL) spectroscopy to study polarization properties of light emissions from individual GaNP and GaP/GaNP core/shell NWs with average diameters ranging between 100 ...

We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasin...

Surface states in semiconductor nanowires (NWs) are detrimental to the NW optical and electronic properties and to their light emission-based applications, due to the large surface-to-volume ratio of NWs and the congregation of defects states near surfaces. In this paper, we demonstrated an effective approach to eliminate surface states in InAs NWs of zinc-blende (ZB) and wurtzite (WZ) structur...

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including lat...

Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.2 eV), which transits into a direct band gap (∼ 1.65 eV) in monolayers. Monolayer WSe(2), therefore, is of co...