Voltage Source Converters (VSC) have for the first time been used for HVDC transmission in a real network. Experience from the design and commissioning of the transmission shows that the technology has now reached the stage where it is possible to build high voltage converters utilising Insulated Gate Bipolar Transistors (IGBTs). Operation and system tests have proved that the properties that h...

AbstructIGBT’s are available with short-circuit withstand times approaching those of bipolar transistors. These IGBT’s can therefore be protected by the same relatively slow-acting circuitry. The more efficient IGBT’s, however, have lower shortcircuit withstand times. While protection of these types of IGBT’s is not difficult, it does require a reassessment of the traditional protection methods...

The aim of this study is to achieve online monitoring the junction temperature double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using on-state voltage under a high current maximize utilization IGBT chips. Online measurement plays an important role in improving reliability inverter with IGBT, increasing density motor controller electric vehicles, and reducing cost v...

A reliable configuration for triggering a series string of power metal oxide semiconductor (MOS) devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each metal oxide semiconductor field effect transistor (MOSFET), except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage...

This paper includes modeling and simulation of 180 MW units of pumped storage power plant with Variable speed machines. In this method, voltage source inverters are used instead of traditional cyclo-converters. This paper aims to control the voltage source inverters and maintain DC voltage at a constant value. AC/ DC/ AC converter is used in system configuration structure in order to control an...

Acknowledgements The results presented in this thesis were obtained during my employment as a scientific coworker at the The colleagues at EELE for the good working atmosphere. The students who supported me with their projects.

A micro-sectioning approach for characterizing the quality or degradation state of interconnect interfaces in electronic components is described. The method is presented as a means of investigating the bonding quality of the Al wedge bonding process in IGBT modules. Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules Kristian Bonderup Pede...

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25 °C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed. 1