As a potential biological imaging probe with a long-wavelength of emission, InP quantum dots were prepared via a high-temperature organic solution approach, and successfully transferred into an aqueous system through a ligand-exchange process using various functional surfactants. Photoluminescence and X-ray characterizations confirmed the desired properties of the InP quantum dots. The cytotoxi...

III-V compound multijunction solar cells enable ultrahigh efficiency performance in designs where subcells with high material quality and high internal quantum efficiency can be employed. However the optimal multijunction cell bandgap sequence cannot be achieved using lattice-matched compound semiconductor materials. Most current compound semiconductor solar cell design approaches are focused o...

This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges. INTRODUCTION Compound semiconductor InP heterojunction bipolar transistors (HBTs) hold great promise for ultra high-speed analog microwave circuit applications. The low frequency noise characteristics ...

We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. Heterogeneous growth from the MSCs directly to InP QDs was observed without intermediate sized particles. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermi...

F. Granat, O. Dossin, R. Henrion, M. Pastor, C. Layssol-Lamour, D. Jacques, M. Delverdier, C. Trumel 1: Université de Toulouse, UPS, INP, ENVT, UMS006, Laboratoire Central de Biologie Médicale, F-31076 Toulouse, France 2: INSERM, UMS 006, Laboratoire Central de Biologie Médicale, F-31076 Toulouse, France 3: Université de Toulouse, UPS, INP, ENVT, Internal Medicine, Department of Small Animal Cl...

The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition ran...

lasers, [ 9–11 ] biomedical imaging, [ 12,13 ] and sensors. [ 14,15 ] Currently, CdSe NCs as the workhorse have been well developed for such uses. [ 16–32 ] Despite their apparent advantages (high emission quantum yields, narrow emission line width, good photostability, etc. [ 33–37 ] ), the intrinsic toxicity of CdSe NCs makes them environmentally restricted, which has thus cast a doubtful fut...

Total gene expression analysis (TOGA) was used to identify genes that are differentially expressed in brain regions between the alcohol-naive, inbred alcohol-preferring (iP), and -nonpreferring (iNP) rats. alpha-Synuclein, expressed at >2-fold higher levels in the hippocampus of the iP than the iNP rat, was prioritized for further study. In situ hybridization was used to determine specific brai...

We use infrared (IR) and Raman spectroscopies to investigate the optically active phonon modes in InP nanoparticles and InP/II–VI core-shell nanoparticles fabricated by similar colloidal chemistry methods. The IR transmission spectra of several InP nanoparticle samples exhibit a common absorption feature, which we assign to the Fröhlich mode. The Raman results for the same samples show transver...

Impurity-free disordering IFD of the InAs quantum dots QDs capped with either an InP layer or an InGaAs/ InP bilayer is studied. The samples are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850 °C for 30 s. A large differential energy shift of 157 meV is induced by SiO2 in the QDs capped with an InGaAs/ InP bilayer. Contrary to the report...