نتایج جستجو برای: ingaasp

تعداد نتایج: 465  

2007
Frederik Van Laere Maria V. Kotlyar Dirk Taillaert Thomas F. Krauss

We present theoretical and experimental results for compact slanted gratings for vertical coupling between single-mode fiber and InP–InGaAsP waveguides. The maximum calculated coupling efficiency is 59%. We have measured a coupling efficiency of 16% for a 10m-long slanted grating.

Journal: :Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1998

2009
Erik J. Norberg John S. Parker Uppili Krishnamachari Robert S. Guzzon Larry A. Coldren

A novel flattened ring resonator design utilizing Etched Beam Splitters (EBS) in InGaAsP/InP is proposed and demonstrated. A multiple-thickness hard mask that compensates for RIE-lag realizes waveguides and EBS gaps in a single etch step. ©2009 Optical Society of America OCIS codes: 230.5750 Resonators, 250.5300 Photonic integrated circuits

2005
Günther Roelkens Joost Brouckaert Dirk Taillaert Pieter Dumon Wim Bogaerts Richard Nötzel Dries Van Thourhout Roel Baets

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-onInsulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This technology development enables the integration of a photonic interconnection layer on top of CMOS. Fabrication processes were optimized and the transfer of a passive Silicon-on-Insulator waveguide layer usin...

Journal: :Optics letters 2005
Martin T Hill H J S Dorren X J M Leijtens J H den Besten T de Vries J H C van Zantvoort E Smalbrugge Y S Oei J J M Binsma G D Khoe M K Smit

Two active Mach-Zehnder interferometers are integrated in a monolithic InP/InGaAsP photonic integrated circuit. Together they form a crucial component for optical signal processing: an optical memory element or set-reset flip-flop. The switching time for this initial device is approximately 200 ps. The photonic integrated circuit contains active and passive optical components, including electro...

2005
Erik J. Skogen Larry A. Coldren James W. Raring Steven P. DenBaars

The development of photonic integrated circuits lattice matched to GaAs are desirable for the manufacture of high-power, high-efficiency optical components. In this letter we investigate and describe a process technique based on quantum-well intermixing to achieve multiple band edges in the Al-free 980 nm InGaAs/ InGaAsP/InGaP material system. © 2005 American Institute of Physics. fDOI: 10.1063...

2017
Yi Yu Sara Ek Mikkel Heuck Kresten Yvind Jesper Mørk

We fabricated and characterized InGaAsP photonic crystal nanocavities. By carefully tailoring the structural parameters, both an efficient coupling and a suitable Q-factor can be achieved. Depending on the design of the coupling region, sharp Fano lines may be observed. OCIS codes: (050.5298) Photonic crystals; (350.4238) Nanophotonics and photonic crystals; (220.4241) Nanostructure fabrication.

Journal: :Optics express 2008
Muhan Choi Susumu Shinohara Takahisa Harayama

We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

2009
Erik J. Norberg Robert S. Guzzon Steven C. Nicholes John S. Parker Larry A. Coldren

A novel monolithic programmable optical lattice filter consisting of unit cell building blocks is proposed. Single unit cells incorporating a ring resonator in one arm of a Mach–Zehnder are fabricated in an InGaAsP–InP material system. Programmable poles and zeros are demonstrated and monolithically cascaded unit cells are used to synthesize a flat passband.

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