Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal-semiconductor-metal (Al-Ge-Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are attributed to intervalley electron transfer. At yet higher electric fields, impact ionization leads to an exponential...

We used near-field scanning optical microscopy (NSOM) having spatial resolution ∼100 nm in combination with diffraction-limited micro-photoluminescence (μ-PL) and time-resolved (TR) spectroscopy to study emission properties of single colloidal CdSe nanowires (NWs). Comparison of NSOM and wide-field μ-PL images allows observation of residual chemical and/or water drops attached to a NW, which ac...

0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.04.037 * Corresponding author. Tel.: +41 21 693 5633; fax E-mail address: [email protected] (M This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at leas...

Although the various effects of strain on silicon are subject of intensive research since the 1950s the physical background of anomalous piezoresistive effects in Si nanowires (NWs) is still under debate. Recent investigations concur in that due to the high surface-to-volume ratio extrinsic surface related effects superimpose the intrinsic piezoresistive properties of nanostructures. To clarify...

Cu2O-ZnO nanowire solar cells have the advantages of light weight and high stability while possessing a large active material interface for potentially high power conversion efficiencies. In particular, electrochemically fabricated devices have attracted increasing attention due to their low-cost and simple fabrication process. However, most of them are "partially" electrochemically fabricated ...

Si/Si1-xGex Heterostructured nanowires are grown by Reduced Pressure-Chemical Vapor Deposition (RP-CVD) using catalyst assisted Vapor Liquid Solid (VLS) and Vapor Solid Solid (VSS) method. We aim to obtain compositional (Si/Si1xGex) and/or doped (p-i-n) heterostructures with abrupt interfaces. The resulting NW heterostructures are structurally characterized using e.g. transmission electron micr...

Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors,...

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure ...

Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dop...