Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms E centers in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E cente...

We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectromet...

The paper reviews the polyanionic hexagons of silicon and germanium, focusing on aromaticity. The chair-like structures of hexasilaand hexagermabenzene are similar to a nonaromatic cyclohexane (CH2)6 and dissimilar to aromatic D6h-symmetric benzene (CH)6, although silicon and germanium are in the same group of the periodic table as carbon. Recently, six-membered silicon and germanium rings with...

Three-dimensional molecular dynamics simulations are conducted to study the nanometric cutting of germanium. The phenomena of extrusion, ploughing, and stagnation region are observed from the material flow. The uncut thickness which is defined as the depth from bottom of the tool to the stagnation region is in proportion to the undeformed chip thickness on the scale of our simulation and is alm...

The response of a high-purity germanium detector to X-rays in the 8-15-keV energy region has been investigated. The w-value and energy resolution dependencies on the X-ray energy have been studied. No abrupt variation of w is observed at the germanium K absorption-edge (11.104-keV). The detector energy resolution follows a characteristic linear dependence on Ex(-1/2) over the whole energy range...

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-f...

Strained silicon germanium carbon (Si1 x yGexCy or SiGeC) on silicon was oxidized using a novel photo-oxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacitors were fabricated with the resulting oxide and electrical characterization was done. The SiGeC MOS capacitors proved to have high leakage current...

Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface bet...

The 3 862.5 cm−1 vibration of oxygen in crystalline germanium is shown to decay into one 1 local mode of the oxygen center plus two lattice modes. This description predicts increases in the linewidths in O-doped germanium, and decreases in the linewidths in O-doped germanium, as the Ge mass in the Ge-O-Ge complex increases, in agreement with observation. The decay time is expected to vary only ...

Germanium optical fibers have been fabricated using a high pressure chemical deposition technique to deposit the semiconductor material inside a silica capillary. The amorphous germanium core material has a small percentage of hydrogen that saturates the dangling bonds to reduce absorption loss. Optical transmission measurements were performed to determine the linear losses over a broad mid-inf...