The evolution of lump solutions for the Zakharov-Kuznetsov equation and the surface electromigration equation, which describes mass transport along the surface of nanoconductors, is studied. Approximate equations are developed for these equations, these approximate equations including the important effect of the dispersive radiation shed by the lumps as they evolve. The approximate equations sh...

Submitted for the MAR08 Meeting of The American Physical Society Nanometer sized electrodes fabricated by electromigration of Au and Pd nanowires ALEXANDRU VLAD, SÉBASTIEN FANIEL, BENOı̂T HACKENS, VINCENT BAYOT, SORIN MELINTE, DICE Université Catholique de Louvain, Louvain la Neuve, Belgium — Electromigration-driven metallic nanowire failure is presented. Here, Au and Pd nanowires patterned by e...

As the electronics industry continues to push for miniaturization, several reliability factors become vital issues. The demand for a high population of smaller and smaller solder bumps, while also increasing the current, have resulted in a significant increase in the current density. As outlined in the International Technology of Roadmap for Semiconductors (ITRS), this trend makes electromigrat...

The electromigration behaviour of copper interconnects realized in damascene architecture indicates macroscopic and microscopic electromigration divergence sites. Macroscopic divergence sites exist at the cathode end of via bottoms where the barrier layer can be a blocking boundary for the electromigration flux. As microscopic divergence can be considered triple point sites of the grain boundar...

As process technology continues to shrink, interconnect current densities continue to increase, making it ever more difficult to meet chip reliability targets. For microprocessors in the latest 32nm processes, interconnect wear-out via electromigration is as critical a design parameter, if not more so, as timing, power, and area, and must be planned for from the outset. This paper presents a tr...

Interface atom migration and compositional evolution during the heterostructure nanojoining process under external electrical loadings has been investigated in situ inside a transmission electron microscope with atomic resolution. The results indicate that the migration of oxygen atoms on the contact interface of metal nanorods is a thermal dominated process rather than an electromigration proc...

Competing mechanisms of electromigration and thermomigration in flip chip SnAgCu (SAC) solder joints was studied experimentally. A chain of solder joints were stressed at 2.0 × 10 Amps/cm, 2.4 × 10 Amps/cm, and 2.8 × 10 Amps/cm current density at room temperature. In the test vehicle, some solder joints were exposed to a combination of electromigration and thermomigration, while some others wer...

this report shows the survey of reliability of 3D IC manufactory and its robustness. Firstly, we consider the reliability of the manufactory of 3D IC. The process-induced thermal stresses around TSVs raise serious reliability issues such as Si cracking and performance degradation of devices. Finite element analysis (FEA) combined with analytical methods is introduced to investigate this issue, ...

In this paper, Moir e interferometry technique is used to measure the in situ displacement evolution of lead-free solder joint under electric current stressing. Large deformation was observed in solder joint under high density (10 A/cm) current stressing. The deformation was found to be due to electromigration in the solder joint. An electromigration constitutive model is applied to simulate de...

The electromigration wind force in various Al alloys is calculated using a Green’s-function method for the calculation of the electronic structure. The influence of the environment of the jumping atoms is studied in detail in the Al-Cu alloy. Alloys of Al with 3d and 4sp alloying elements are studied systematically in order to investigate the relation between the electronic states of the alloyi...