نتایج جستجو برای: effect transistors
تعداد نتایج: 1652097 فیلتر نتایج به سال:
This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...
In the electronics industry, scaling and optimization is final goal. But, according to ITRS predictions, silicon as basic material for semiconductors, is facing physical limitation and approaching the end of the path. Therefore, researchers are looking for the silicon replacement. Until now, carbon and its allotrope, graphene, look to be viable candidates. Among different circuits, IO block is ...
The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...
Related Articles Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transi...
Related Articles Cell viability studies and operation in cellular culture medium of n-type organic field-effect transistors J. Appl. Phys. 111, 034702 (2012) Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors APL: Org. Electron. Photonics 5, 40 (2012) Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si met...
Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Role of oxy...
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We report biodetection of the thyroid hormone triiodothyranine (T3) using carbon nanotube field-effect transistors. T3 molecules bind non-covalently the semiconducting nanotube and donate electrons to the nanotube lattice, thereby altering its electronic characteristics via chemical doping. The effect is semi-reversible by rinsing the transistors with the T3 solvent without the biomolecule. The...
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