نتایج جستجو برای: effect transistors

تعداد نتایج: 1652097  

Journal: :Applied Physics Letters 2008

   This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...

ژورنال: محاسبات نرم 2018

In the electronics industry, scaling and optimization is final goal. But, according to ITRS predictions, silicon as basic material for semiconductors, is facing physical limitation and approaching the end of the path. Therefore, researchers are looking for the silicon replacement. Until now, carbon and its allotrope, graphene, look to be viable candidates. Among different circuits, IO block is ...

Journal: :Science 2010
Y-M Lin C Dimitrakopoulos K A Jenkins D B Farmer H-Y Chiu A Grill Ph Avouris

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...

2012
Weikai Xu Hemant Rao Gijs Bosman

Related Articles Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transi...

2012
Jinhua Li Jun Du Jianbin Xu Helen L. W. Chan Feng Yan

Related Articles Cell viability studies and operation in cellular culture medium of n-type organic field-effect transistors J. Appl. Phys. 111, 034702 (2012) Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors APL: Org. Electron. Photonics 5, 40 (2012) Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si met...

2015
Huarui Sun Miguel Montes Bajo Michael J. Uren Martin Kuball

Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Role of oxy...

2012
Zhiyong Zhang Huilong Xu Hua Zhong Lian-Mao Peng

Related Articles An all C60 vertical transistor for high frequency and high current density applications APL: Org. Electron. Photonics 5, 250 (2012) Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors Appl. Phys. Lett. 101, 212104 (2012) Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxidesem...

2003
Enrique Rojas

We report biodetection of the thyroid hormone triiodothyranine (T3) using carbon nanotube field-effect transistors. T3 molecules bind non-covalently the semiconducting nanotube and donate electrons to the nanotube lattice, thereby altering its electronic characteristics via chemical doping. The effect is semi-reversible by rinsing the transistors with the T3 solvent without the biomolecule. The...

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