We investigate the influence of collective plasma modes in a field-effect transistor channel under different excitations and biasing conditions. First, we study the case of a device externally-excited by a harmonic optical beating or an electronic excitation and current-driven at the drain. The harmonic and continuous responses of the transistor are calculated using a pseudo-two-dimensional hyd...

Chest drains incorporate the use ofa one-way valve to drain fluid or air from the pleural cavity. The valve prevents back-flow of air and fluid into the pleural cavity. They are indicated for use when collections of fluid or air are present in the pleural space, and by draining the collection they restore eÖScient gaseous exchange. Little has heen written on the nursing managetnent of chest dra...

A set of different short term stress conditions are applied to AlGaN/GaN high electron mobility transistors and changes in the electronic behaviour of the gate stack and channel region are investigated by simultaneous gate and drain current low frequency noise measurements. Permanent degradation of gate current noise is observed during high gate reverse bias stress which is linked to defect cre...

A Disruption Tolerant Network (DTN) is characterized by scenarios where end-to-end connectivity is rarely available. Hence, in such networks, the use of existing ad hoc routing protocols may result on poor performance, since they rely on the existence of an end-to-end path between the source and destination nodes. This paper proposes a DTN routing strategy called DRAIN. Differently from other p...

By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic  valley electrons. In this work we ex...

A variable range hopping (VRH) transport has been observed in a low-temperature conductance of C60 field-effect transistor (C60FET). It appears below 100 K in place of a nearest neighbor hopping transport. We have investigated various C60FETs fabricated by several thermal annealing conditions and source-drain separations. Disorder states in the pseudo-gap of C60FET can be controlled by the ther...

Mobile ad hoc networks’ (MANETs) inherent power limitation makes power-awareness a critical requirement for MANET protocols. In this paper, we propose a new routing metric, the drain rate, which predicts the lifetime of a node as a function of current traffic conditions. We describe the Minimum Drain Rate (MDR) mechanism which uses a combination of the drain rate with remaining battery capacity...