نتایج جستجو برای: doping concentration
تعداد نتایج: 403896 فیلتر نتایج به سال:
The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...
A detailed three-dimensional (3-D) statistical “atomistic” simulation study of fluctuation-resistant sub-0.1m MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1m generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with un...
We review theoretical investigations of high-temperature superconductors which have been performed by density functional theory. The main subject of our study is the Hg-based family of the superconducting cuprates, which demonstrates unusual and still puzzling properties. We show that the first-principles approach is able to describe the effects of chemical doping and pressure on the structur...
p-Type PbTe is an outstanding high temperature thermoelectric material with zT of 2 at high temperatures due to its complex band structure which leads to high valley degeneracy. Lead-free SnTe has a similar electronic band structure, which suggests that it may also be a good thermoelectric material. However, stoichiometric SnTe is a strongly p-type semiconductor with a carrier concentration of ...
We demonstrate an optical technique, called laser-gain scanning microscopy (LGSM), to map dopant concentration profiles in engineered laser gain-media. The performance and application range of this technique are exampled on a Nd(3+) concentration profile embedded in a YAG transparent ceramic sample. Concentration profiles measured by both LGSM and SIMS techniques are compared and agree to withi...
در این تحقیق، ساختار لیزرهای نقطه کوانتومی، مشخصه ها، نواقص، و همچنین فاکتور های محدود کننده سرعت مدولاسیون بالا و تکنولوژی های کلیدی برای بهبود عملکرد آن بیان می شوند. با بررسی اثر پهن شدگی گرمایی حفره ها که ناشی از جرم موثر سنگین ، حفره ها در نوار ظرفیت لیزر های نقطه کوانتومی است ، نشان می دهیم که یکی از عوامل مهم در محدود کردن سرعت مدولاسیون لیزرهای نقطه کوانتومی ، نزدیکی بیش از اندازه تراز ...
The breaking of time reversal symmetry (TRS) in three-dimensional (3D) topological insulators (TIs), and thus the opening of a 'Dirac-mass gap' in the linearly dispersed Dirac surface state, is a prerequisite for unlocking exotic physical states. Introducing ferromagnetic long-range order by transition metal doping has been shown to break TRS. Here, we present the study of lanthanide (Ln) doped...
Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Double-stranded salmon DNA (SDNA) was doped with doxorubicin hydrochloride drug molecules (DOX) to determine the binding between DOX and SDNA, and DOX optimum doping concentration in SDNA. SDNA thin films were prepared with various concentrations of DOX by drop-casting on oxygen plasma treated glass and quartz substrates. Fourier transform infrared (FTIR) spectroscopy was employed to investigat...
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