The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmosphe...

The sidewall defects in selective epitaxial growth ~SEG! of silicon were characterized and the nature of these defects was investigated. Electrical characterization of the sidewall defects was performed using diodes fabricated in structures using the SEG of silicon and chemical-mechanical polishing. Diodes were fabricated with various perimeter to area ratios to extract the bulk and sidewall sa...

The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...

Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...

An important mindset of practical engineers is to build systems from simple and reliable components while maximizing functionality and performance with a minimal number of basic devices. Diodes are among those building blocks that are frequently part of electrically circuits. They are simple two-terminal devices which conditionally pass current in one direction. Despite their simplistic nature,...

To meet the desired electrostatic discharge (ESD) robustness, ESD diodes was added into the I/O cells of integrated circuits (ICs). However, the parasitic capacitance from the ESD diodes often caused degradation on circuit performance, especially in the high-speed I/O applications. In this work, two modified layout styles to effectively improve the figures of merits (FOMs) of ESD protection dio...

Large attention has been devoted worldwide to the investigation of hydrogen sensors based on various Schottky diodes. We prepared graphite semimetal Schottky contacts on polished n-InP and n-GaN wafers partly covered with nanoparticles of catalytic metals Pd or Pt by applying colloidal graphite. Metal nanoparticles were deposited electrophoretically from colloids prepared beforehand. Deposited ...

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Related Articles Enhanced life time and suppressed efficiency roll-off in phosphorescent organic light-emitting diodes with multiple quantum well structures AIP Advances 2, 012117 (2012) Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes AIP Advances 2, 012109 (2012) Work-function-tuned multilayer graphene as curren...

A novel on-chip electrostatic discharge (ESD) protection design by using polysilicon diodes as the ESD clamp devices in CMOS process is first proposed in this paper. Different process splits have been experimentally evaluated to find the suitable doping concentration for optimizing the polysilicon diodes for both on-chip ESD protection design and the application requirements of the smart-card I...