نتایج جستجو برای: dielectric device

تعداد نتایج: 711473  

2011
Imran Khan M. Zulfequar

The electrical conduction phenomena, dielectric response and microstructure have been discussed in sintered silicon nitride ceramics at different temperature and frequencies. Microstructure and phase of the sintered samples was investigated by Scanning Electron Microscope (SEM) and X-ray diffractometer (XRD). The electrical conductivity, dielectric constant and dielectric loss increases exponen...

Journal: Journal of Nanoanalysis 2020

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

2015
Suxia Xie Zhijian Li

Responses of free standing subwavelength annular dielectric nanorod arrays are described. Extreme reflection peaks with high quality factor follow a multiple scattering approach, which can be explained by geometrical resonance. It is demonstrated that the value and the resonant frequency of the sharp geometric resonance modes can be tuned by geometric parameters such as the outer radius, inner ...

2011
Y. Katsumoto S. Omori K. Sato T. Umetsu M. A. Brun H. Soma T. Hayakawa S. M. Lee K. Sakai Y. Hayashi A. Yasuda M. Nagasawa T. Morio S. Mizutani

We propose the idea of single cell dielectric spectroscopy for future clinical applications such as cell therapy and regenerative medicine. The structure of the microfluidic device is carefully designed to suppress the influence of electrode polarization on the dielectric spectra of single cells. Beads of uniform size distribution is used to determine the detection limit. As feasibility tests f...

2004
K. B. Chong Linfeng Chen C. K. Ong

Al2O3 doped Ba0.5Sr0.5TiO3 ~BST! thin films, with different Al2O3 contents, were deposited on ~100! LaAlO3 substrates by the pulsed laser deposition technique to develop agile thin films for tunable microwave device applications. The dielectric properties of Al2O3 doped BST films were determined with a nondestructive dual resonator near 7.7 GHz. We demonstrated that the Al2O3 doping plays a sig...

2004
M. W. Cole W. D. Nothwang C. Hubbard

Successful integration of paraelectric Ba1-xSrxTiO3 (BST) based thin films with affordable Si substrates has a potential significant commercial impact as the demand for high-frequency tunable devices intensifies. Utilizing a coplanar device design we have successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, whi...

Journal: :ACS applied materials & interfaces 2012
Jagan Singh Meena Min-Ching Chu Yu-Cheng Chang Chung-Shu Wu Chih-Chia Cheng Feng-Chih Chang Fu-Hsiang Ko

An organic-organic blend thin film has been synthesized through the solution deposition of a triblock copolymer (Pluronic P123, EO20-PO70-EO20) and polystyrene (PS), which is called P123-PS for the blend film whose precursor solution was obtained with organic additives. In addition to having excellent insulating properties, these materials have satisfied other stringent requirements for an opti...

2001
Jack Chen Sung-Jin Park J. Gary Eden Chang Liu

This paper reports a novel silicon micromachined microdischarge device. The device is comprised of a bulk micromachined cathode substrate and a metal anode, separated by a dielectric layer. This device produces light emission from the cavity in a noble gas under a large DC bias. Stable operation has been observed over a wide range of operating pressures. Arrays as large as 10×10 have been obser...

Journal: :Chemical communications 2014
Kyeong-Ju Moon Tae Il Lee Sang-Hoon Lee Jae-Min Myoung

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.

2012
B. Bhowmick S. Baishya

A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...

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