We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two v...

Michael J. Mortonson,1, 2, 3 Wayne Hu,3, 4 and Dragan Huterer5 Center for Cosmology and AstroParticle Physics, The Ohio State University, Columbus, OH 43210 Department of Physics, University of Chicago, Chicago, IL 60637 Kavli Institute for Cosmological Physics and Enrico Fermi Institute, University of Chicago, Chicago, IL 60637 Department of Astronomy & Astrophysics, University of Chicago, Chi...

Dark current generation and capture are of great importance in high gradient accelerating structure R&D especially for the NLC which aims to operate at 65 MV/m with specific limits on dark current and RF breakdown rates. Although considerable effort has been devoted to building and testing various types of structures to meet these requirements, few theoretical studies have been done to understa...

We present a model for the description of dark IV curves in midinfrared quantum well infrared photodetectors at low temperatures, in a regime where dark current is dominated by interwell tunneling. The model separates the IV curve into a low-field and a high-field region allowing us to identify the effects ascribed to miniband transport and carrier localization, respectively. At low fields the ...

A study of dark current in digital imagers in digital singlelens reflex (DSLR) and compact consumer-grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown to increase in successive images during a series of images. DSLR and compact consumer cameras are often designed such that they are contained within a...