Power consumption and especially leakage power are the main concerns of nano MOSFET technology. On other hand, binary circuits face a huge number interconnection wires, which results in dissipation area. Researchers introduced emerging nanodevices multiple-valued logic (MVL) as two feasible solutions to overcome challenges mentioned above. Carbon nanotube field-effect transistor (CNFET) is one ...

The embedded systems, IoT (Internet of Things) devices, and portable electronic devices spread very quickly recently. Most them depend on batteries to operate. target this work is decrease energy consumption by (1) using Multiple-valued logic (MVL) that shows notable enhancements regarding over binary circuits (2) carbon nanotube field-effect transistors (CNFET) show better performance than CMO...

Leading digital circuits namely register, flipflops, state machines and counters drive operational aspects potential applications in Integrated Circuit (IC) industry. MOS Current Mode Logic (MCML) based implementations with rapid response simultaneous generation of complemented output is all set to become indispensable nano regime This paper attempts optimize address performance-based analysis ...

The size and parameter optimization for the 5-nm carbon nanotube field effect transistor (CNFET) static random access memory (SRAM) cell was presented in Part I of this article. Based on that work, we propose a (CNT) SRAM array composed schematically optimized CNFET CNT interconnects. We consider interconnects inside metallic single-wall (M-SWCNT) bundles to represent metal layers 0 1 (M0 M1). ...

Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely expected to be the building blocks of next generation VLSI circuits. This chapter presents (1) the first purely CNT and CNFET based nanoarchitecture, (2) an adaptive configuration methodology for nanoelectronic design based on the CNT nano-architecture, and (3)...

High speed Full-Adder (FA) module is a critical element in designing high performance arithmetic circuits. In this paper, we propose a new high speed multiple-valued logic FA module. The proposed FA is constructed by 14 transistors and 3 capacitors, using carbon nano-tube field effect transistor (CNFET) technology. Furthermore, our proposed technique has been examined in different voltages (i.e...

-For many years VLSI Chip designers have been using Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). As the channel length of device is reducing, effects like parametric variations and increase in leakage current have caused V-I characteristics to deviate from those of traditional MOSFETs. Hence the development of devices at deep submicron retards to some extent. Carbon Nanotube Fi...