10 nanolasers and LED applications. 11 GaAs nanostructures (e.g., nanowires and 12 nanosheets) with high surface-to-volume 13 ratios, however, suffer from high surface 14 state densities and high surface recombina15 tion velocities, which typically limit their 16 optoelectronic device performance. Passiva17 tion of GaAs nanostructures has been widely 18 studied in the literature, including clad...

Zero-valent iron (ZVI) application in groundwater remediation is limited by its vulnerability to passivation, which significantly decreases its surface reactivity. Both biological and chemical processes can potentially passivate ZVI, although the understanding of biological passivation is limited. This study was conducted in bench-scale reactors packed with fresh ZVI or ZVI pre-exposed to nitra...

Novel architecture and layout considerations were employed to fabricate chemical imaging devices on a complementary metal oxide semiconductor (CMOS) compatible platform. Arrays of Chemoreceptive Neuromorphic Neuron Transistors (CνMOS) were created, and silicon nitride was employed as a passivation layer. These devices will be used for a wide variety of spatially resolved biochemical sensing stu...

This paper presents an experimental study on different microelectrode fabrication techniques, with particular focus on the robustness of the surface insulation towards typical working conditions required in lab-on-a-chip applications. Pt microelectrodes with diameters of 50 μm, 100 μm and 200 μm are patterned on a Si substrate with SiO(2) film. Sputtered SiO(2), low-pressure chemical vapor depo...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

Passivation hermiticity is always a concern in integration circuit fabrication and application. Passivation stress is one of the key factors for the passivation integrity. In this paper, passivation stress is investigated as a function of top metal profiles with a 3Dimentional Finite Element Modeling (3D FEM). A new structure is proposed for reducing the passivation stress at the corner of a to...

The corrosion behaviour of three new non-toxic titanium alloys for use as biomaterials has been investigated. The corrosion current densities of these Ti alloys have low values, indicating a passive state that is stable with time. These values were calculated by using both direct and alternate current methods. The comparison with Ti–6Al–4V, widely used as biomaterial, shows slightly lower corro...

We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%–10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the subthreshold region, 10%–20% higher pulsed-I V drain ...

Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-Al(2)O(3) is the critical step in fabricating III-V metal oxide semiconductor field effect transistors; while the bulk oxide is amorphous, the interface may need to be ordered to prevent electrical defect formation. A two temperature in situ cleaning process is shown to produce a clean, flat group II...