نتایج جستجو برای: amorphous silicon

تعداد نتایج: 102897  

Journal: :Journal of the Illuminating Engineering Institute of Japan 1993

Journal: :Acta crystallographica. Section A, Foundations of crystallography 2011
James P Cline Robert B Von Dreele Ryan Winburn Peter W Stephens James J Filliben

A non-diffracting surface layer exists at any boundary of a crystal and can comprise a mass fraction of several percent in a finely divided solid. This has led to the long-standing issue of amorphous content in standards for quantitative phase analysis (QPA). NIST standard reference material (SRM) 676a is a corundum (α-Al(2)O(3)) powder, certified with respect to phase purity for use as an inte...

Monte Carlo Method is used to simulate a double layer gadolinium-amorphous silicon thermal neutron detector. The detector fabricated in pixel array configuration has various applications including neutron imaging. According to the simulation results, a detector consisting of a gadolinium (Gd) film with thickness of 2-4 ~m, sandwiched properly with two layers of sufficiently thick (-30 ?µm) hydr...

Alireza Hojabri Fatemeh Hajakbari Majid Mojtahedzadeh Larijani

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

2012
Satoru Kaneko Takeshi Ito Kensuke Akiyama Manabu Yasui Chihiro Kato Satomi Tanaka Yasuo Hirabayashi Takeshi Ozawa Akira Matsuno Takashi Nire Hiroshi Funakubo Mamoru Yoshimoto

As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser effi...

2001
T. Kosteski N. P. Kherani P. Stradins F. Gaspari W. T. Shmayda L. S. Sidhu

The introduction of tritium into hydrogenated amorphous silicon has given rise to a novel material with interesting physical properties and potential applications. Tritium undergoes radioactive decay, transforming into He and emitting an electron with average energy 5.7keV, at a rate equivalent to a half-life of 12.3 years. The decay of tritium results in the creation of electron– hole pairs an...

2013
V. Jovanov S. Shrestha M. Schulte M. Zeman D. Knipp

The influence of the interface morphologies on amorphous silicon thin-film solar cells prepared on randomly textured substrates was studied. A simple three-dimensional geometrical model was developed to describe the surface morphology of amorphous silicon films and thin-film solar cells. The simulated surface morphologies are confirmed by experimental measurements. A detailed understanding of t...

1998
E. Monticone V. Lacquaniti R. Steni

|The response of Nb Josephson junctions fabricated on di erent substrates, silicon and amorphous glass, is measured under optical illumination at several conditions of light intensity and light chopping frequency. The linearity of the response on the optical power extends over ve orders of magnitude. The signal of the junction on silicon is 2 order of magnitude lower than that of the junction o...

2005
A. A. D. T. Adikaari R. P. Silva

Excimer laser crystallization is used to produce layered nanocrystalline silicon from hydrogenated amorphous silicon, using a partial melting process. Three types of hydrogenated amorphous silicon samples, 100, 300, and 500 nm thick, were laser treated in order to investigate the changes to the structural, optical, and electrical properties as a function of amorphous silicon thickness with exci...

2014
Mathias Mews Christoph Mader Stephan Traut Tobias Sontheimer Odo Wunnicke Lars Korte Bernd Rech

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...

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