In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucial for a detailed understanding of electronic transport in realistic devices. Recently, we have introduced a new potentiometry method based on low-e...

The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents junctionless transistor from scaling. effect of L-BTBT on FIN shaped gate Junctionless field transistor(JLFET) with ground plane (GP) in oxide has been investigated. proposed device is simulated using 3-D Silvaco TCAD shows that it can mitigate leads to efficient volume depletion which rel...

The self-assembly of nanoparticles on substrates is relevant for a variety of applications such as plasmonics, sensing devices and nanometer-sized electronics. We investigate the deposition of 60 nm spherical Au nanoparticles onto silicon dioxide (SiO2) substrates by changing the chemical treatment of the substrate and by that altering the surface charge. The deposition is characterized by scan...

In the first-ever demonstration of FinFET technology suitable for 10-nm CMOS manufacturing – pushing device scaling two nodes beyond the current leading-edge volume production technology – Samsung and others will jointly showcase a platform technology for low-power and high-performance applications. It offers the tightest contacted poly pitch (64 nm) and metallization pitch (48 nm) ever reporte...

For the 45nm technology node, high-k+metal gate transistors have been introduced for the first time in a high-volume manufacturing process [1]. The introduction of a high-k gate dielectric enabled a 0.7x reduction in Tox while reducing gate leakage 1000x for the PMOS and 25x for the NMOS transistors. Dual-band edge workfunction metal gates were introduced, eliminating polysilicon gate depletion...

Cadmium Zinc Telluride (CZT) achieves excellent spatial resolution and good energy resolution over the broad energy range from several keV into the MeV energy range. In this paper we present the results of a systematic study of the performance of CZT detectors manufacturered by Orbotech (before IMARAD) depending on surface preparation, contact materials and contact deposition. The standard Orbo...

Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for th...

High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively explores the physics and mechanism of the intrinsic parameter fluctuations in nanoscale fin-type field-effect transistors by using an experimentally validated three-dimensional quantum-corrected device simulation. The dominance fluctuation sources in threshold vo...