We describe a method of ultrashort-pulse and ultrafast-pulse-train generation through optical parametric amplification of a laser beat wave. Numerical simulation shows that 250-fs laser pulses at 1.55 lm are generated from a beat-wave seeded optical parametric amplifier pumped by a 30-ps laser at 1064 nm. The pulse compression is attributable to sideband generation and parametric amplification ...

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semico...

We report on an optical frequency comb with 14 nm (∼1.8  THz) spectral bandwidth at a -3  dB level that is generated using a passively mode-locked quantum-well laser in photonic integrated circuits fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase mod...

We have developed a three-stage CO(2) master-oscillator-amplifier system that produces 1.1 TW of peak power. The system generates 170 J of energy in a diffraction-limited 160+/-10ps pulse on the 10P(20) line. We also report the realization of a two-wavelength terawatt-peak-power CO(2) laser that can be tuned to an arbitrary pair of lines. A two-stage semiconductor switching system driven by a p...

Optical microresonators are ideal tools for the reduction of the threshold of optical parametric oscillation based on four-wave mixing. Usually, the efficiency and bandwidth of the resonant process are interdependent due to stringent phase matching requirements leading to limitation of the bandwidth of the spectrum generated for a given pump power. We demonstrate a continuous-wave low-threshold...

In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This ...

We describe a Nd:YAG slab laser master oscillator power amplifier (MOPA) system that has been scaled to 104 W of output power at 1064 nm, single transverse mode. The amplifier system consists of rod amplifiers followed by edgeand end-pumped slab amplifiers. The MOPA output of 104 W was 89% fundamental TEM00 spatial mode with less than 3% depolarization. These results are a key milestone in the ...

Detailed analyses of the short-term stability of the semiconductor fiber ring laser (SFRL) are presented. Analysis with rate equations shows that the relaxation oscillation effect does not exist in the SFRL. With a frequency-domain model, the mode competition in the SFRL is shown to be suppressed by the gain saturation effect of the semiconductor optical amplifier. Thus the observed good short-...

A wide variety of applications require high peak laser intensity in conjunction with a narrow spectral linewidth. Typically, injection-locked amplifiers have been employed for this purpose, where continuous wave oscillator is amplified secondary external resonant amplifier cavity using pulsed pump laser. In contrast, here we demonstrate setup that combines CW Ti:sapphire and single optical cavi...