Under the usual conditions of operation the MOS transistor operates in saturation and is a square-law device: the characteristic curve of the drain current as a function ofthe gate voltage is parabolic in shape (see the preceding article [11, fig. 2b). However, if the MOS transistor is biased to bring the operating point on to the slope of the parabola, then the amplification will be practicall...

This paper presents an optimized knowledge-based design approach for design of analog integrated circuits. The proposed design approach uses gm/ID technology characteristic in order to find the transistor dimensions (W, L) and drain currents. This method employs the gm/ID characteristic curve versus normalized drain current In=ID/(W/L) to calculate the design variables such as width (W) and len...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...

The novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field-effect transistor. The saturation velocity depends on the charge-carrier co...

In this study, a three-dimensional “atomistic” circuitdevice coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxidesemiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, ...

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to...

We introduce a new transistor architecture based on inter-band tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. While there have been reports on tunnel transistors in Si, Ge material system and their alloys, we focus specifically on narrow gap compound semiconductor (CS) systems to develop tunnel transistors. We address the fol...

In this work, an Indium Antimonide (InSb) quantum well transistor is investigated using full-band Monte Carlo simulations. The steady-state characteristic of the device is first analyzed, showing particle transport along a two-dimensional electron gas (2DEG). The small-signal behavior of the device is also investigated. Finally, a noise analysis is performed, allowing for a twodimensional mappi...

Utilizing a type II interaction for second-harmonic generation in a crystal of potassium titanyl phosphate, we experimentally demonstrate the all-optical action of a light modulator with both signal and output at the same optical wavelength. This modulator is controlled by the intensity of the injected signal, a characteristic that makes it a suitable candidate for all-optical transistor action...