نتایج جستجو برای: stacking fault tetrahedral
تعداد نتایج: 82400 فیلتر نتایج به سال:
Various four-mirror optical resonators are studied from the perspective of realizing passive stacking cavities. A comparative study of the mechanical stability is provided. The polarization properties of the cavity eigenmodes are described, and it is shown that the effect of mirror misalignments (or motions) induces polarization and stacking power instabilities. These instabilities increase wit...
In the title compound, C(14)H(8)Br(2)F(3)NO, the mol-ecule is disordered across an approximate non-crystallographic mirror plane, which is in the plane of the fused ring system [The tetrahedral C atom bearing the trifluormethyl substituent is disordered with site occupancy factors of 0.80 (2) and 0.20 (2)]. In the crystal, a one-dimensional stacking of mol-ecules involves inter-actions between ...
A density functional theory–phase field dislocation dynamics model is used to study stress-induced emission of defects from grain boundaries in nanoscale face-centered cubic (fcc) crystals under ambient conditions. The propensity for stable stacking fault formation and the maximum grain size DSF below which a stacking fault is stable are found to scale inversely with the normalized intrinsic st...
Impressive opto-electronic devices and transistors have recently been fabricated from GaAs nanopillars grown by catalyst-free selective-area epitaxy, but this growth technique has always resulted in high densities of stacking faults. A stacking fault occurs when atoms on the growing (111) surface occupy the sites of a hexagonal-close-pack (hcp) lattice instead of the normal face-centered-cubic ...
As characteristic length scales shrink (<100 nm) in fcc metals, alternative deformation mechanisms not seen in bulk and course-grained material counterparts emerge. In particular in grain sizes on the order of 10s of nanometers, plasticity is mediated by the motion and interaction of partial dislocations and extended stacking faults. Typically, partial dislocations nucleate at grain boundary de...
(2014) Tensile properties of Si nanowires with faulted stacking layers. Notice: Changes introduced as a result of publishing processes such as copy-editing and formatting may not be reflected in this document. For a definitive version of this work, please refer to the published source: Semiconductor nanowires (NWs) show tremendous applications in micro/nano-electro-mechanical systems. In order ...
Zirconium alloys were widely used as fuel cladding in nuclear reactors. Stacking fault pyramid (SFP) is an irradiation-induced defect zirconium. In this work, the formation process of SFP from a hexagonal vacancy plate on basal plane studied by molecular dynamics (MD) simulations. The results show that, during plate, d...
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