Mid-infrared photonics in silicon needs low-loss integrated waveguides. While monocrystalline germanium waveguides on silicon have been proposed, experimental realization has not been reported. Here we demonstrate a germanium strip waveguide on a silicon substrate. It is designed for single mode transmission of light in transverse magnetic (TM) polarization generated from quantum cascade lasers...

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with th...

While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, beg...

Abstract. The interstitial oxygen centers in silicon and germanium are reconsidered and compared in an analysis based on the first-principles total-energy determination of the potential-energy surface of the centers, and a calculation of their respective low energy excitations and infrared absorption spectra. The total-energy calculations reveal unambiguously that interstitial oxygen is quantum...

In a theoretical design study, we propose buried waveguides made of germanium or alloys of germanium and other group-IV elements as a CMOS-compatible platform for robust, high-gain stimulated Brillouin scattering (SBS) applications in the mid-infrared regime. To this end, we present numerical calculations for backward-SBS at 4 μm in germanium waveguides that are buried in silicon nitride. Due t...

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge ...

This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is shown to provide lower noise performance. The impact of SiGe on linearity is explored. Three parameters are increasingly important for cellular handsets and other digital, portable, wireless communication...

This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is shown to provide lower noise performance. The impact of SiGe on linearity is explored. Three parameters are increasingly important for cellular handsets and other digital, portable, wireless communication...

In this paper we report experimental studies carried out on two-dimensional electrons in strained silicon and two-dimensional holes in strained germanium channel modulation doped heterostructures, to understand their lowand high-field transport properties. Hall measurements were done to determine the low-field Ohmic mobility as a function of temperature ~13–300 K!. Geometric magnetoresistance t...