نتایج جستجو برای: semiconductor process modelling
تعداد نتایج: 1498214 فیلتر نتایج به سال:
Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is stil...
Semiconductor industry requires ultrapure chemicals to manufacture microelectronic devices. Hydrogen peroxide is one of the most demanded chemical by the semiconductor industry and ultrapurification processes are needed to achieve the electronic grade requirements for this chemical. Among all the ultrapurification alternatives, reverse osmosis emerges as the most desirable option according to e...
We propose the use of semiconductor quantum dots for simulating chemical reactions, as electrons are redistributed among such artificial atoms. We show that it is possible to achieve various reaction regimes and obtain different reaction products by varying the speed of voltage changes applied to the gates forming quantum dots. Considering the simplest possible reaction, H2 +H→H+H2, we show how...
Excitonic effects are introduced in standard semiconductor device modelling of solar cells. Previous work by the groups of Green and of Zhang is extended here to also include field dependent exciton dissociation in the space charge layer (SCL) of a np diode, and exciton surface dissociation or charge transfer at the contact or at the junction. A clear result is that it is possible to apply the ...
A discussion of three topics in the eld of non linear optics is presented We begin with the Colliding Pulse Mode locked CPM Quantum Well QW laser A large signal model consisting of a wave propagation equation for the electrical eld and a rate equation model for the material response is derived The wave propagation equation of the electrical eld is derived from Maxwell s equations in the slowly ...
The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication o...
Nucleation and growth models are well developed for nucleation on homogeneous substrates, and they can typically be described in terms of three energy parameters. Nucleation on substrates containing point-defect traps has been investigated, at the cost of introducing more energy parameters. This paper outlines the quantitative description of such growth models, using rate and rate-diffusion equ...
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