This paper presents the design and performance comparison of a two stage operational amplifier topology using CMOS and BiCMOS technology. This conventional op amp circuit was designed by using RF model of BSIM3V3 in 0.6 μm CMOS technology and 0.35 μm BiCMOS technology. Both the op amp circuits were designed and simulated, analyzed and performance parameters are compared. The performance paramet...

A power amplifier (PA) is a key part of the RF front-end in transmitters for a local broadband network. Today, commercial PAs are made of III-V HEMT and HBT technology with excellent results. An integrated system-on-chip power amplifier circuit using CMOS technology for cost-effective and spectrum-efficient high-speed wireless communication presents major challenges because power amplifiers hav...

This paper presents the design of a CMOS RF Power Detector (PD) using 0.18 μm standard CMOS technology. The PD is an improved unbalanced source coupled pair incorporating an output differential amplifier and sink current steering. It realizes an input detectable power range of −30 to −20 dBm over 0.1–1 GHz. Also it shows a maximum data rate of 30 Mbps with 2 pF output loading under OOK modulati...

SUMMARY RF Variable Gain Amplifiers (RF-VGA) are important components for integrated TV broadcast receivers. Analog and digital controlled RF-VGAs are compared in terms of linearity and an AGC loop architecture suitable for digitally controlled RF-VGA is proposed. Further linearity enhancement applicable for CMOS implementation is also discussed .

The rapid increase in Internet communications’ products such as high-speed switches, SerDes (serial-deserializer) elements and XAUI (X=10G, attachment unit interface) ports has energized the need for process technologies that support both digital and analog (mixed-signal) elements at radio frequencies (RF). In order for these products to be competitive, process technologies that support analog/...